Dual-Plasma Deposition Chamber for Step Coverage and Damage Mitigation
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Solution Overview
Problem
Physical vapor deposition (PVD) techniques often cause damage to underlying layers of substrates, particularly in small features with high aspect ratios, leading to poor step coverage and defects that compromise device performance and reliability.
Innovation Solution
A processing chamber equipped with multiple RF coils and electromagnet assemblies for independent control of magnetic fields, along with a removable biasable flux optimizer, allows for controlled plasma distribution and directionality, enabling a multi-step process including inductive coupled plasma (ICP) low energy deposition, deposition, and etching to enhance step coverage and reduce damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-energy ions are used to enhance the deposition rate in PVD, then the deposition efficiency is improved, but damage to the underlying layers is caused
Solution Approach 1:
The patent divides the deposition process into multiple steps using different plasma conditions. The first step uses high-energy ions for rapid deposition, while subsequent steps use low-energy ions to repair damage and improve step coverage. This segmentation allows the system to achieve high deposition rates without compromising underlying layer integrity.
Solution Approach 2:
The patent applies a preliminary low-energy ion deposition step before the main high-rate deposition. This preliminary action prepares the substrate surface and underlying layers by reducing damage accumulation, enabling the subsequent high-rate deposition to proceed without causing harmful effects to the underlying structure.
2Productivity
If PVD deposition is performed on small features with high aspect ratios, then the deposition process is completed, but poor step coverage and defects are produced
Solution Approach 1:
The patent employs periodic alternation between high-energy and low-energy ion deposition modes. During high-energy phases, material is rapidly deposited to fill high aspect ratio features. During low-energy phases, the ion damage is reduced allowing better step coverage and defect prevention. This periodic switching resolves the contradiction between completing deposition and achieving precision.
Solution Approach 2:
The patent dynamically changes plasma parameters (ion energy, pressure, gas composition) during the deposition process. By adjusting these parameters between steps, the system optimizes both the ability to complete deposition in high aspect ratio features and the quality of step coverage, preventing defects while maintaining productivity.
3Manufacturing precision
If multiple process steps (ICP, deposition, etching) are implemented to improve step coverage and reduce damage, then the film quality is enhanced, but the process complexity increases
Solution Approach 1:
The patent combines multiple functions (deposition, plasma treatment, damage repair) into a single integrated process chamber and sequence. Rather than requiring separate equipment for each step, the invention implements all processes in one chamber with automated parameter switching, reducing overall system complexity while maintaining high film quality.
Solution Approach 2:
The deposition apparatus is designed with multi-functionality, capable of performing high-energy deposition, low-energy deposition, and plasma treatment using the same hardware configuration. This universality allows complex film quality enhancement without proportionally increasing device complexity, as the same chamber and components serve multiple purposes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved step coverage and reduced damage to underlying layers, ensuring high-quality, uniform thin film deposition suitable for precise semiconductor device fabrication.
Implementation Method 1
a first RF coil assembly configured to generate a primary plasma in a first region of the processing chamber
Implementation Method 2
a second RF coil assembly configured to generate a secondary plasma in a second region of the processing chamber
Implementation Method 3
inductive coupled plasma (ICP) low energy deposition
Data Source
AI summary
Embodiments described herein provide an apparatus and method for fabricating semiconductor devices with improved process control and performance. The apparatus includes a processing chamber with first and second RF coil assemblies generating primary and secondary plasmas in distinct regions, along with first and second electromagnet assemblies for independent magnetic field control. A removable biasable flux optimizer is disposed in the apparatus to modulate plasma distribution and directionality. The method involves a three-step sequence comprising Inductive coupled plasma (IMP) low energy deposition, deposition for enhanced step coverage, and etching for overhang removal. The ICP deposition utilizes primary and secondary plasmas generated by the RF coil assemblies, with intensified collisions achieved through chamber pressure increase. Additionally, a simultaneous deposition and etching process can be employed, with optional additional etching steps for improved overhang removal.