Dual-Plasma Substrate Chamber for Transfer-Free Deposition and Development
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Solution Overview
Problem
Existing substrate processing methods require separate chambers for different processes like deposition and development, leading to inefficiencies and time-consuming substrate transfers between Capacitively Coupled Plasma (CCP) and Inductively Coupled Plasma (ICP) type chambers.
Innovation Solution
A substrate processing apparatus that integrates a chamber with an electrode unit for generating first plasma, a coil unit for generating second plasma, and a remote plasma unit for supplying radicals, allowing simultaneous deposition and development processes to be performed efficiently, with improved uniformity and etch rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate chambers are used for deposition and development processes, then each process can be performed with dedicated equipment, but substrate transfer time increases and processing efficiency decreases
Solution Approach 1:
The patent combines deposition and development processes into a single chamber, eliminating the need for substrate transfer between chambers. The chamber is equipped with both CCP electrode units for deposition and ICP coil units for development, allowing both processes to be performed in the same environment, thereby improving processing efficiency while maintaining process quality through dedicated plasma generation capabilities for each process.
Solution Approach 2:
The chamber is designed as a multi-functional processing chamber that can perform both deposition and development processes. The chamber includes both CCP-type electrode units and ICP-type coil units, enabling it to serve multiple purposes: deposition through CCP, development through ICP, and potential other plasma-based processes, thereby eliminating the need for separate dedicated chambers.
2Manufacturing precision
If substrate is transferred between CCP and ICP chambers, then each process can be optimized with appropriate plasma type, but processing time increases due to transfer operations
Solution Approach 1:
The patent merges CCP electrode units and ICP coil units within the same chamber, allowing the substrate to remain in one location while switching between deposition and development processes. This eliminates transfer time completely while maintaining process optimization through dedicated plasma generation mechanisms for each process type.
Solution Approach 2:
The chamber design allows dynamic switching between CCP and ICP plasma generation modes within the same processing environment. The system can activate either the CCP electrode units or the ICP coil units as needed, providing dynamic process adjustment without requiring physical substrate transfer, thereby eliminating transfer time while maintaining process optimization.
3Device complexity
If only CCP type chamber is used, then device structure is simpler, but development uniformity and anisotropic etching efficiency are insufficient
Solution Approach 1:
The chamber employs a composite plasma generation system that combines both CCP electrode units and ICP coil units. This composite approach leverages the advantages of both plasma types: CCP provides good ion directionality for anisotropic etching, while ICP provides high plasma density for improved development uniformity. The combination achieves superior development uniformity and anisotropic etching efficiency without requiring separate chambers.
4Quantity of substance
If only ICP type chamber is used, then plasma density is higher, but anisotropic etching capability is reduced
Solution Approach 1:
The chamber combines ICP coil units for high plasma density generation with CCP electrode units for directional ion control. The ICP component provides the high plasma density needed for efficient processing, while the CCP component provides the ion directionality required for anisotropic etching. This composite plasma generation system achieves both high plasma density and superior anisotropic etching capability within a single chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and uniform processing of substrates by combining CCP and ICP plasma types, enhancing deposition and development processes, and maintaining consistent airflow and exhaust flow rates.
Implementation Method 1
an electrode unit configured to generate first plasma in the processing space and having opposing electrodes
Implementation Method 2
a coil unit located in an upper side of the processing space, and configured to generate second plasma supplied into the processing space
Implementation Method 3
a remote plasma unit configured to supply radicals to the processing space
Data Source
AI summary
Disclosed is an apparatus for processing a substrate, the apparatus including: a chamber providing a processing space; an electrode unit for generating first plasma in the processing space and having opposing electrodes; a coil unit located in an upper side of the processing space, and for generating second plasma supplied into the processing space; and a remote plasma unit for supplying radicals to the processing space.