Dual Plasma Generator Layout for Uniform Substrate Processing
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Solution Overview
Problem
In semiconductor device manufacturing, the miniaturization of circuit patterns leads to challenges in uniformly supplying activated gases to the substrate surface, making it difficult to form uniform films during the plasma-based processing steps.
Innovation Solution
A substrate processing apparatus is designed with a process chamber, a gas supply system, and two plasma generators – one wound around the periphery and another protruding from the top – to generate and distribute plasma uniformly across the substrate surface, ensuring efficient plasma generation and film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single plasma generator is used, then the device complexity is reduced, but the uniformity of plasma distribution across the substrate surface deteriorates
Solution Approach 1:
The plasma generation function is segmented into two separate plasma generators: a first plasma generator positioned at the upper portion of the process chamber and a second plasma generator wound around the outer periphery. This segmentation allows each generator to contribute to different regions of plasma distribution, achieving uniform plasma coverage across the substrate surface while maintaining manageable device complexity
Solution Approach 2:
The invention transitions from a single-point or single-plane plasma generation approach to a two-dimensional plasma distribution system. The first plasma generator provides plasma from the upper region while the second plasma generator provides plasma from the peripheral region, creating a multi-dimensional plasma distribution pattern that ensures uniform coverage across the entire substrate surface
2Productivity
If circuit patterns are miniaturized, then the integration of semiconductor devices is improved, but the uniform supply of activated gas to the substrate surface becomes difficult
Solution Approach 1:
The gas supply and plasma generation functions are segmented across two plasma generators positioned at different locations. This segmentation enables controlled distribution of activated gas from multiple directions (upper and peripheral), ensuring uniform supply to the miniaturized circuit patterns on the substrate surface
Solution Approach 2:
Each plasma generator is positioned to provide localized plasma generation and activated gas supply to specific regions of the substrate. The first plasma generator targets the central/upper region while the second plasma generator targets the peripheral regions, ensuring that even miniaturized patterns receive uniform activated gas distribution across the entire substrate surface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the formation of uniform films on the substrate surface, improving the production of active species and enhancing plasma generation efficiency, thus addressing the challenge of non-uniform processing in miniaturized semiconductor devices.
Implementation Method 1
a first plasma generator installed to be wound around an outer periphery of the process chamber and configured to generate plasma from the processing gas in the process chamber
Implementation Method 2
configured to generate plasma from the processing gas in the process chamber
Data Source
AI summary
There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supply system configured to supply a processing gas into the process chamber; a first plasma generator installed to be wound around an outer periphery of the process chamber and configured to generate plasma from the processing gas in the process chamber; and a second plasma generator installed at an upper portion of the process chamber to protrude toward an inside of the process chamber and configured to generate plasma from the processing gas in the process chamber.