Dual-Polymer Orientation Layer for Directed Self-Assembly Patterning
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Solution Overview
Problem
Existing directed self-assembly (DSA) processes for semiconductor manufacturing require multiple steps and additional materials to orientate polymer segments, complicating the formation of dense and nanoscale patterns on substrates.
Innovation Solution
A method involving the use of a dual-polymer orientation layer system, where a first polymer with lower activation energy forms a layer on the substrate's top surface and a second polymer with higher activation energy forms a layer on the sidewall, allowing for directed self-assembly without the need for additional processes or materials, enabling the formation of densely packed patterns with uniformity and precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional DSA processes use single-polymer orientation layers, then the process requires multiple additional steps and materials to orientate different polymer segments, but this increases process complexity and manufacturing steps
Solution Approach 1:
The patent combines two separate orientation layers (first orientation layer for first polymer segment and second orientation layer for second polymer segment) into a single dual-polymer orientation layer. This single layer contains both first polymer and second polymer with different activation energies, allowing both polymer segments to be oriented simultaneously through a single DSA process, thereby reducing process complexity while maintaining orientation precision
Solution Approach 2:
The dual-polymer orientation layer serves multiple functions within a single structure: it provides orientation guidance for both the first polymer segment and the second polymer segment of the block copolymer. The first polymer and second polymer in the orientation layer have different activation energies that correspond to the different polymer segments, enabling universal orientation functionality in one layer
2Manufacturing precision
If additional orientation layers are added to achieve precise nanoscale patterns, then pattern uniformity and precision improve, but the number of manufacturing steps and materials increase
Solution Approach 1:
The patent merges the functionality of multiple orientation layers into a single dual-polymer orientation layer, reducing the number of manufacturing steps while achieving the same nanoscale pattern precision. This consolidation eliminates the need for sequential deposition and processing of separate orientation layers, thereby improving manufacturing efficiency
3Reliability
If multiple orientation layers are used to guide different polymer segments, then self-assembly orientation is achieved, but additional materials and processes are required
Solution Approach 1:
The dual-polymer orientation layer provides universal orientation guidance for both polymer segments of the block copolymer within a single material system. The first polymer and second polymer in the orientation layer are specifically designed with activation energies matching those of the block copolymer segments, enabling reliable self-assembly orientation without requiring multiple different materials
Solution Approach 2:
The patent combines the orientation guidance functions for different polymer segments into a single dual-polymer orientation layer, reducing the total quantity of materials required while maintaining reliable self-assembly orientation. This single layer contains all necessary orientation guidance elements for both polymer segments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the DSA process by eliminating the need for additional patterning steps and materials, achieving uniform and precise nanoscale patterns on semiconductor substrates, enhancing manufacturing efficiency and integration with existing fabrication flows.
Implementation Method 1
a first polymer with lower activation energy forms a layer on the substrate's top surface and a second polymer with higher activation energy forms a layer on the sidewall
Implementation Method 2
A DSA process takes advantage of the self-assembling properties of materials, such as block copolymers (BCP), to reach nanoscale dimensions
Data Source
AI summary
Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.