Dual Pumping Unit Semiconductor Device for Leakage Reduction
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Solution Overview
Problem
Semiconductor memory devices face inefficiencies in charge pumping due to significant leakage current, leading to pumping loss and short-circuit loss during voltage transitions.
Innovation Solution
A semiconductor device with a dual pumping unit configuration and controller, which includes initialization, boosting, and transmission units, controls voltage output and disables units when input signals are in the same logic state to prevent leakage current, thereby minimizing pumping and short-circuit losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If charge pumping is performed using conventional pumping circuits, then voltage boosting is achieved, but significant leakage current is generated during voltage transitions
Solution Approach 1:
The patent applies dynamics by making the initialization unit dynamically controllable through a control signal. The initialization unit is enabled only when needed (during specific voltage transition phases) and disabled during normal operation, allowing the system to adapt its behavior to minimize leakage current while maintaining voltage boosting capability when required.
Solution Approach 2:
The patent changes the operational state parameter of the initialization unit by controlling its enable/disable status through a control signal. By changing the initialization unit's state from enabled to disabled based on operating conditions, the system reduces leakage current during voltage transitions while preserving the ability to initialize when necessary.
2Power
If pumping operations are performed continuously, then voltage boosting is maintained, but pumping loss and short-circuit loss increase
Solution Approach 1:
The patent implements periodic action by controlling the initialization unit to operate only during specific phases of the voltage transition cycle. The control signal enables the initialization unit periodically when voltage transitions are detected, rather than continuously, thereby reducing pumping loss and short-circuit loss while maintaining voltage boosting during active pumping operations.
Solution Approach 2:
The patent extracts the initialization function from continuous operation by isolating it to specific needed moments through control signal management. The initialization unit is taken out of continuous operation and activated only when voltage transitions occur, separating the initialization function from continuous pumping to reduce unnecessary energy losses.
Data Source
AI summary
Provided is a semiconductor device for performing charge pumping. The semiconductor device may include a first pumping unit, a second pumping unit, and a controller. The first pumping unit may be configured to output a boosted voltage via an output node by using a first input signal and the initial voltage, where the boosted voltage is greater than an initial voltage. The second pumping unit may be configured to output the boosted voltage via the output node by using a second input signal and the initial voltage. The controller may be configured to control the first and second pumping units. Each of the first and second pumping units may include an initialization unit, a boosting unit, and a transmission unit. The initialization unit may be configured to control a voltage of a boosting node to be equal to the initial voltage during an initialization operation. The boosting unit may be configured to boost the voltage of the boosting node based on the first and second input signals. Also, the transmission unit may be configured to control output of the boosted voltage.