Dual Rail Crackstop Arcing Prevention via Through-BOX Contact
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Solution Overview
Problem
High resistivity SOI substrates in RF technologies promote plasma non-uniformities and arcing susceptibility in crackstop structures during semiconductor fabrication, particularly in dual rail crackstop structures where arcing occurs between adjacent metal structures.
Innovation Solution
A dual rail crackstop structure with non-intersecting metal rails and a through-BOx electrical contact connecting each rail to an underlying substrate, allowing the rails to float to the same electrical potential and reducing arcing susceptibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dual rail crackstop structures are used to prevent cracks and seal edges, then crack prevention and edge sealing are improved, but arcing susceptibility between adjacent rails increases during plasma etch
Solution Approach 1:
The patent applies equipotentiality by electrically connecting adjacent metal rails to the same electrical potential through shared via structures. This eliminates potential differences between rails, preventing arcing during plasma etch while maintaining the dual rail crackstop structure's crack prevention and edge sealing functions.
Solution Approach 2:
The patent merges the electrical connection function into the existing via structures that connect metal layers to the substrate. By having adjacent rails share common via structures, the patent combines multiple functions (mechanical support, electrical connection, and arcing prevention) into a single integrated solution.
2Object-affected harmful factors
If through-BOx electrical contacts are added to connect rails to substrate, then arcing susceptibility is reduced, but device complexity increases
Solution Approach 1:
The patent makes the via structures multi-functional by having them serve both as electrical connections between metal layers and as shared electrical potential references for adjacent rails. This universal via structure eliminates the need for separate arcing prevention structures, reducing overall device complexity while still preventing arcing.
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to arc resistant crackstop structures and methods of manufacture. The structure includes: a crackstop structure comprising dual rails surrounding an active area of an integrated circuit; and a through-BOx electrical contact electrically connecting each of the dual rails to an underlying substrate.