Dual-Range Gate Driving for Mixed GaN and Si Power Modules
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Solution Overview
Problem
Intelligent Power Modules (IPMs) face challenges in power consumption and functionality due to the differing threshold voltages of GaN and Si devices, leading to inefficiencies and malfunctions when driven by the same high-voltage integrated circuit tube.
Innovation Solution
A power device with a control input terminal connected to high or low levels, utilizing separate driving circuits and resistor groups to output high/low level signals in specific voltage ranges, ensuring proper operation of both GaN and Si devices without increasing power consumption or mixing HVIC tubes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high voltage is supplied to the high-voltage integrated circuit tube to ensure the normal operation of the Si device, then the Si device operates normally, but the gate of the GaN device breaks down
Solution Approach 1:
The patent divides the driving circuit into separate first and second driving circuits, each dedicated to driving either GaN or Si devices. This segmentation allows each circuit to be optimized for its specific device type, preventing the gate breakdown issue that occurs when a single circuit attempts to drive both types with incompatible voltage levels.
Solution Approach 2:
The patent implements local quality by providing different driving voltage ranges to different device types. The first driving circuit outputs signals in a first voltage range suitable for GaN devices, while the second driving circuit outputs signals in a second voltage range suitable for Si devices, allowing each device to operate in its optimal voltage environment.
2Reliability
If a low voltage is supplied to the high-voltage integrated circuit tube to ensure the normal operation of the GaN device, then the GaN device operates normally, but the power consumption of the entire Si intelligent power module increases, causing malfunction of the Si device
Solution Approach 1:
The patent segments the driving function into separate circuits, allowing the second driving circuit to provide adequate voltage for Si devices without being constrained by GaN device requirements, thus preventing excessive power consumption and device malfunction.
Solution Approach 2:
The patent applies local quality by enabling the second driving circuit to output signals in a second voltage range specifically optimized for Si devices, ensuring they receive sufficient voltage for normal operation without the power consumption issues that would arise from low-voltage operation.
3Device complexity
If the same high-voltage integrated circuit tube drives both GaN and Si devices, then device integration is achieved, but adaptability and functionality are reduced due to different threshold voltages
Solution Approach 1:
The patent segments the driving circuitry into specialized first and second driving circuits, each optimized for specific device types. This segmentation maintains integration within the IPM while enhancing adaptability, allowing the system to properly drive both GaN and Si devices despite their different threshold voltages.
Solution Approach 2:
The patent achieves universality by designing the IPM to accommodate multiple device types through multiple driving circuits. The system can selectively drive GaN devices, Si devices, or combinations thereof, making the power module versatile and adaptable to different application requirements.
Data Source
AI summary
A power device and an electrical appliance are provided. The power device has a control input terminal, a first driving circuit and a second driving circuit. When the control input terminal is connected to a high level or a low level, the first driving circuit and the second driving circuit output a high/low level signal in a first voltage range or a high/low level signal in a second voltage range. The first voltage range is different from the second voltage range.