Dual-Reactor Substrate Processing With UV Surface Activation
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving high-quality deposition while avoiding damage to temperature-sensitive features on substrates, as they require precise temperature control that contradicts the need for both high reactivity and low temperatures.
Innovation Solution
A substrate processing apparatus with a first reactor for deposition and a second reactor for ultraviolet radiation treatment, where the second reactor irradiates ultraviolet radiation within a specific range (100 to 500 nanometers) to enhance reactivity without overheating, using an illumination system to improve layer quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate temperature is increased to improve deposition reactivity and layer quality, then the deposition rate and layer quality improve, but the temperature-sensitive features on the substrate may be damaged
Solution Approach 1:
The patent divides the substrate processing into two separate reactors: a first reactor for deposition at controlled temperatures and a second reactor for UV treatment. This segmentation allows each reactor to be optimized for its specific function, enabling high-quality deposition without exposing temperature-sensitive features to excessive heat
Solution Approach 2:
The patent introduces UV radiation as an intermediary to enhance deposition reactivity and layer quality without requiring high substrate temperatures. The UV radiation acts as a mediator that provides the necessary energy for high-quality deposition while keeping the substrate temperature low enough to protect temperature-sensitive features
2Temperature
If an illumination system is incorporated into the deposition reactor to provide UV radiation, then energy can be provided to the substrate surface without overheating, but the deposition process may deposit material on the illumination system deteriorating UV transmission
Solution Approach 1:
The patent separates the illumination system into a dedicated second reactor, physically isolating it from the deposition process in the first reactor. This prevents deposition material from contaminating the illumination system while allowing UV radiation to effectively treat the substrate surface
Solution Approach 2:
The illumination system is extracted from the deposition reactor and placed in a separate second reactor. This extraction eliminates the problem of deposition material deteriorating UV transmission while maintaining the beneficial effect of UV radiation on substrate surface treatment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved layer quality and productivity by providing energy to the substrate surface through UV radiation, while minimizing overheating and maintaining temperature-sensitive features intact.
Implementation Method 1
an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor
Implementation Method 2
During chemical vapor deposition (CVD), for example, the deposition gases react within particular temperature windows and deposit on the substrate
Data Source
AI summary
The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.