Dual-Frequency RF Chamber Cleaning for Thick Hardmask Deposition
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Solution Overview
Problem
Current hardmask materials used in semiconductor manufacturing lack the desired etch selectivity and deposition efficiency, leading to insufficient thickness and quality issues, which limits throughput and device yield due to the need for multiple iterations and cleaning processes.
Innovation Solution
A substrate processing chamber utilizing dual frequency RF power sources, with one source operating at 40 MHz or greater for the lid and another at 10-20 MHz for the substrate support, enables single-shot deposition of high-quality hardmask films with increased thickness without intermediate cleaning, improving film quality and reducing processing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional single-frequency RF power is used for hardmask deposition, then the deposition process is simple, but the film quality deteriorates at thicknesses exceeding 3,000 Å with defects and requires intermediate cleaning
Solution Approach 1:
The RF power source is segmented into two distinct frequency components: a first frequency (e.g., 13.56 MHz) applied to the lid and a second frequency (e.g., 400 kHz to 10 MHz) applied to the substrate support. This segmentation allows independent optimization of plasma conditions for both film deposition and ion bombardment control, enabling defect-free thick hardmask films without intermediate cleaning
Solution Approach 2:
The patent changes the RF power parameters by introducing dual frequencies with different characteristics. The first frequency maintains stable plasma for continuous deposition, while the second frequency provides controlled ion bombardment to prevent defects. This parameter change enables single-shot deposition of thick films (exceeding 3,000 Å) with maintained film quality
2Manufacturing precision
If multiple iterations with cleaning between depositions are used to produce thick hardmasks, then film quality is maintained, but throughput decreases and processing time increases
Solution Approach 1:
The dual frequency RF power system enables continuous deposition action without interruption for cleaning. The first frequency sustains continuous film deposition while the second frequency simultaneously prevents defect formation through controlled ion bombardment, allowing single-shot deposition of thick hardmasks and eliminating intermediate cleaning steps to improve throughput
3Ease of manufacture
If current hardmask materials are used, then deposition is straightforward, but etch selectivity is insufficient relative to underlying materials
Solution Approach 1:
The patent changes the deposition parameters by using dual frequency RF power with specific frequency ranges (first frequency around 13.56 MHz, second frequency around 400 kHz to 10 MHz) to achieve superior film properties. This parameter change produces hardmask films with enhanced etch selectivity relative to underlying materials while maintaining ease of deposition through standard PECVD processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the deposition of high-quality hardmask films with thicknesses exceeding 3,000 Å without defects, enhancing device yield by maintaining film quality on both the substrate and chamber components, and reducing the need for frequent cleaning, thus improving manufacturing efficiency.
Implementation Method 1
A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume.
Implementation Method 2
A first radiofrequency (RF) power having a first frequency of about 40 MHz or greater is provided to a lid of the chamber. A second RF power having a second frequency is provided to an electrode disposed in a substrate support within the processing volume.
Data Source
AI summary
Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.