Dual Shielding Plate Layout for Uniform Plasma Etching
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Solution Overview
Problem
Existing dry etching apparatuses face challenges in achieving uniform etching rates and throughput due to insufficient radical distribution and lack of control over gas flow, necessitating separate apparatuses for radical and ion irradiation, which increases costs and reduces efficiency in semiconductor manufacturing.
Innovation Solution
A plasma processing apparatus with a dual shielding plate structure and controlled gas flow system, utilizing a first and second shielding plate with strategically arranged through holes and gas supply ports to uniformly distribute radicals and ions, allowing simultaneous radical and ion irradiation within a single apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single dry etching apparatus is used to perform both radical irradiation and ion irradiation, then apparatus cost is reduced, but uniformity of radical distribution and control over gas flow deteriorate
Solution Approach 1:
The shielding plate is divided into multiple regions with through-holes arranged in specific patterns to segment and direct radical flow paths, ensuring uniform radical distribution across the wafer surface while maintaining a single apparatus structure
Solution Approach 2:
Different regions of the shielding plate are designed with different through-hole arrangements to provide localized radical distribution characteristics, with through-holes strategically positioned to address specific uniformity issues in different areas of the processing chamber
2Device complexity
If a single dry etching apparatus is used to perform both radical irradiation and ion irradiation, then apparatus cost is reduced, but control over gas flow deteriorates
Solution Approach 1:
A gas flow control plate is introduced as an intermediary component between the gas supply and the shielding plate, enabling independent control of gas flow patterns to achieve both radical and ion irradiation functions within a single apparatus
Solution Approach 2:
The gas flow control system is designed to dynamically adjust gas flow patterns, allowing the apparatus to switch between different irradiation modes (radical-only, ion-only, or combined) by controlling the timing and distribution of gas supply
3Manufacturing precision
If separate apparatuses are used for radical irradiation and ion irradiation, then uniform etching and radical distribution are achieved, but throughput is significantly reduced
Solution Approach 1:
The apparatus merges the functions of radical irradiation and ion irradiation into a single processing chamber, allowing both types of irradiation to be performed sequentially or simultaneously on the same wafer without vacuum transfer, thereby maintaining uniform etching quality while significantly improving throughput
Solution Approach 2:
The apparatus enables continuous processing by eliminating the vacuum transfer step between separate apparatuses, allowing the wafer to remain in the processing chamber and undergo both radical and ion irradiation in a continuous sequence, thereby maintaining high throughput and uniform etching results
4Quantity of substance
If through holes are arranged in the shielding plate, then radical supply is enabled, but uniform radical distribution across the wafer surface deteriorates
Solution Approach 1:
The through-holes are arranged in an asymmetric pattern on the shielding plate, with different densities and positions in different regions, to compensate for natural radical flow variations and achieve uniform radical distribution across the wafer surface while maintaining adequate radical supply
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform etching distribution and increased throughput by ensuring adequate radical and ion supply across the wafer surface, enhancing processing efficiency and reducing apparatus costs.
Implementation Method 1
a gas supply port arranged on a side surface of the processing chamber between the first flat plate and the second flat plate to supply gas
Implementation Method 2
a radio frequency power source that supplies radio frequency power for generating plasma
Implementation Method 3
capable of generating plasma by utilizing a magnetic field generated by a solenoid coil and an ECR phenomenon of a microwave of 2.45 GHz
Implementation Method 4
an electron cyclotron resonance (ECR) plasma type dry etching apparatus capable of generating plasma by utilizing a magnetic field generated by a solenoid coil and an ECR phenomenon of a microwave of 2.45 GHz
Implementation Method 5
A plasma processing apparatus with a dual shielding plate structure and controlled gas flow system, utilizing a first and second shielding plate with strategically arranged through holes and gas supply ports to uniformly distribute radicals and ions
Data Source
AI summary
Provided is a plasma processing apparatus that controls the radical distribution on a wafer and prevents particles from flying up on an upper surface of a second shielding plate during isotropic etching. The plasma processing apparatus includes a processing chamber 106 in which a sample is subjected to plasma-processing, a radio frequency power source 113 that supplies radio frequency power for generating plasma, a sample stage 120 on which the sample is placed, and a first flat plate 115 arranged above the sample stage 120 and having a plurality of through holes 170, a second flat plate 116 arranged between the first flat plate 115 and the sample stage 120 and facing the first flat plate 115, and a gas supply port 150 arranged on a side surface of the processing chamber 106 between the first flat plate 115 and the second flat plate 116 to supply gas. The through holes 170 are arranged outside a portion separated from a center by a predetermined distance.