Dual-Side Interconnect Capacitor Layout for Dense Semiconductor Structures
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Solution Overview
Problem
As semiconductor structures shrink in size, there is a need to maintain or increase capacitance while accommodating increased integration density, as existing capacitors like MOM and MIM capacitors face reduced capacitance due to scaling.
Innovation Solution
Implementing capacitors and inductors in both the front-side and back-side interconnect structures of semiconductor devices, utilizing metal-oxide-metal (MOM) and metal-insulator-metal (MIM) capacitors, with specific electrode configurations and arrangements to maintain or enhance capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor structures shrink in size to increase integration density, then device density improves, but capacitance decreases
Solution Approach 1:
The patent utilizes both front-side and back-side interconnect structures to form capacitors, effectively adding a vertical dimension (z-axis) to the capacitor placement. This allows capacitors to be formed on both sides of the substrate, doubling the available capacitance per unit area without increasing the planar footprint, thereby resolving the contradiction between integration density and capacitance maintenance.
2Quantity of substance
If capacitor size is reduced to accommodate higher integration density, then device density improves, but voltage stabilizing capacitance decreases
Solution Approach 1:
By forming capacitors on both the front-side and back-side interconnect structures, the patent effectively doubles the capacitance per unit area. This dimensional approach allows smaller individual capacitors to be used while maintaining total capacitance, as the back-side capacitors compensate for the reduced size of front-side capacitors.
Solution Approach 2:
The patent combines front-side and back-side capacitors to form a unified capacitance system. The capacitors on both sides work together to provide the required voltage stabilizing capacitance, effectively merging two separate capacitor systems into one functional unit that delivers doubled capacitance per unit area.
3Reliability
If more capacitors are added to maintain capacitance, then capacitance is maintained, but device complexity increases
Solution Approach 1:
The patent resolves the complexity issue by utilizing the back-side of the substrate, which is an underutilized dimension. Instead of adding more capacitors on the front-side (which would increase planar complexity), the solution places capacitors on the back-side, effectively using the z-axis to accommodate additional capacitance without significantly increasing front-side complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains or doubles the voltage stabilizing capacitance under the same unit area, allowing for reduced semiconductor structure size or increased device density without compromising performance.
Implementation Method 1
metal-oxide-metal (MOM) capacitors, and metal-insulator-metal (MIM) capacitors
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a front-side interconnect structure formed over a front side of a base layer and a back-side interconnect structure formed over a back side of a base layer. The front-side interconnect structure includes at least one passive element and the back-side interconnect structure includes at least one passive element. The passive element is selected from a capacitor, an inductor and a combination thereof.