Dual-Side Interconnect Cooling for Dense Semiconductor Heat Dissipation
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Solution Overview
Problem
As semiconductor devices continue to increase integration density by reducing minimum feature sizes, heat dissipation becomes a significant challenge, affecting device performance and reliability.
Innovation Solution
Implementing a semiconductor device design with a front-side interconnect structure coupled to a heat sink and a backside interconnect structure coupled to a substrate, which includes embedded fluid channels, enhancing heat dissipation through both structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased by reducing minimum feature sizes, then more components can be integrated into a given area, but heat dissipation becomes a significant challenge
Solution Approach 1:
The patent divides the heat dissipation function into two separate pathways: front-side interconnect structures coupled to heat sinks and backside interconnect structures coupled to substrates with embedded fluid channels. This segmentation allows heat to be dissipated through multiple independent channels, effectively managing thermal load while maintaining high integration density
Solution Approach 2:
The patent utilizes the third dimension by implementing backside interconnect structures that extend heat dissipation pathways vertically through the substrate. Embedded fluid channels are integrated within the substrate thickness, creating additional thermal management dimensions beyond the traditional planar heat sink approach
2Temperature
If front-side interconnect structure is coupled to heat sink and backside interconnect structure is coupled to substrate with embedded fluid channels, then heat dissipation is enhanced, but device complexity increases
Solution Approach 1:
The substrate serves multiple functions: it provides mechanical support for the device and simultaneously acts as a heat dissipation pathway through embedded fluid channels. The interconnect structures on both front and back sides serve dual purposes of electrical connection and thermal management, reducing the need for separate dedicated cooling structures
Solution Approach 2:
The patent merges the interconnect structures with heat dissipation functions by coupling front-side interconnects to heat sinks and backside interconnects to the substrate. This integration combines electrical interconnection and thermal management into unified structures, thereby enhancing heat dissipation while minimizing additional complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improved heat dissipation leads to enhanced device performance and reduced defects by effectively managing thermal stress, thereby supporting higher integration densities.
Implementation Method 1
a front-side interconnect structure coupled to a heat sink
Implementation Method 2
a backside interconnect structure coupled to a substrate, which includes embedded fluid channels
Data Source
AI summary
Semiconductor devices having improved heat dissipation and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including front-side conductive lines; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including backside conductive lines, the backside conductive lines having line widths greater than line widths of the front-side conductive lines; and a first heat dissipation substrate coupled to the backside interconnect structure.