3D Memory Device With Dual-Side Silicon Pillar Integration

The patent merges the insulation function into the common substrate structure itself, rather than adding separate insulation layers between stacked memory cells. The substrate is designed with inherent insulation properties that prevent interference between adjacent memory element strings, eliminating the need for additional insulation regions and reducing manufacturing complexity while maintaining high bit integration density

The common substrate serves multiple functions simultaneously: it provides mechanical support, electrical connection, and insulation between memory element strings. This multi-functional design reduces the number of separate components needed and simplifies the overall device structure while enabling three-dimensional stacking for increased integration density

The patent segments the control mechanism by providing separate control units for memory elements on opposite sides of the substrate. Each control unit independently manages voltage application to its respective memory elements, simplifying the control architecture while enabling three-dimensional stacking. This segmentation allows parallel operation of multiple memory elements without complex cross-interference control

The patent maintains equipotential conditions by applying appropriate voltages to common structures (such as common bit lines and word lines) that are shared between memory elements on opposite sides. This ensures that voltage potentials are properly managed during read and write operations, preventing interference between stacked memory elements while maintaining storage capacity