Dual-Side Seal Ring Layout for Backside Singulation Protection

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Solution Overview

Problem

Existing seal structures in semiconductor integrated circuits (ICs) are inadequate in protecting the backside of IC chips from mist ingress and stress during singulation, particularly in FEOL, MEOL, and BEOL structures.

Innovation Solution

Implementing dual side seal ring structures on both the frontside and backside of IC chips, comprising frontside and backside interconnect structures with aligned seal ring regions to provide comprehensive protection against stress and mist ingress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing seal structures are implemented on IC chips, then protection against mist ingress and stress is provided, but the backside of IC chips remains vulnerable to damage during singulation

Engineering Contradiction:
Improveprotection against mist ingress and stressVSAvoidbackside vulnerability during singulation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent extends seal ring structures from the frontside to the backside of the IC chip, adding protection in a previously uncovered dimension. By implementing seal rings on both sides of the substrate, the invention addresses the vulnerability of the backside during singulation while maintaining frontside protection, thereby resolving the contradiction between existing seal structure benefits and backside vulnerability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If dual side seal ring structures are implemented, then comprehensive protection against stress and mist ingress is achieved, but structural complexity increases

Engineering Contradiction:
Improvecomprehensive protection coverageVSAvoidseal ring structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The seal ring structures serve multiple functions: they provide mechanical stress protection, prevent mist ingress, and maintain structural integrity during singulation. By designing the seal rings to fulfill multiple protective roles, the patent achieves comprehensive protection without proportionally increasing complexity, as the same structural elements perform multiple functions simultaneously.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Strength

If seal ring structures are added to protect during singulation, then mechanical strength is enhanced, but manufacturing complexity increases

Engineering Contradiction:
Improvemechanical strength during singulationVSAvoidseal ring structure fabrication
Core Design Contradiction:
StrengthVSEase of manufacture

Solution Approach 1:

The patent combines the seal ring structures with existing interconnect structures, merging the protective function with the electrical interconnection function. This integration allows the seal rings to be formed as part of the standard IC fabrication process rather than as separate additional steps, thereby enhancing mechanical strength during singulation while minimizing the increase in manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20260107774A1Dual side seal rings
Publication Date: 2026.04.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20260107774A1 patent drawing
  • US20260107774A1 patent drawing
  • US20260107774A1 patent drawing

AI summary

A semiconductor structure with dual side seal rings is provided. A semiconductor structure according to the present disclosure include a substrate including a device region and a ring region surrounding the device region, a frontside interconnect structure disposed over the substrate and including a frontside interconnect region and a frontside seal ring region, and a backside interconnect structure disposed below the substrate and including a backside interconnect region and a backside seal ring region. The frontside interconnect region is disposed over the device region and the backside interconnect region is disposed below the device region. The frontside seal ring region is disposed over the ring region and the backside seal ring region is disposed below the ring region.