Dual-Sided Semiconductor Chip Layout for Compact Bidirectional Switching

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Solution Overview

Problem

Current bidirectional switches realized in a single semiconductor device face challenges with insufficient power density and larger package size, as well as increased production efforts.

Innovation Solution

A semiconductor chip with monolithically integrated switching devices, configured as power transistors or MOSFET/IGBTs, where the devices are connected in series and share internal electrical connections, reducing material consumption and simplifying processing steps, and integrated into a semiconductor package with a dielectric encapsulant for improved thermal dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If bidirectional switches are realized in a single semiconductor device, then device integration is improved, but power density is insufficient

Engineering Contradiction:
Improvedevice integrationVSAvoidpower density
Core Design Contradiction:
Device complexityVSPower

Solution Approach 1:

The semiconductor device is segmented into multiple independent switching devices (first switching device and second switching device) that are monolithically integrated on the same semiconductor chip. Each switching device can be independently controlled and contributes to the overall power capability, resolving the contradiction by dividing the single device into multiple functional units that collectively provide higher power density while maintaining integration benefits

Inventive Principle:
Principle #1Segmentation

2Device complexity

If bidirectional switches are realized in a single semiconductor device, then device integration is improved, but package size increases

Engineering Contradiction:
Improvedevice integrationVSAvoidpackage size
Core Design Contradiction:
Device complexityVSVolume of moving object

Solution Approach 1:

Multiple switching devices are merged onto a single semiconductor chip through monolithic integration, sharing common semiconductor substrate and fabrication processes. This combining approach achieves the functionality of multiple devices while minimizing the overall package size by eliminating the need for separate packages and interconnections that would be required if the devices were implemented separately

Inventive Principle:
Principle #5Merging (Combining)

3Device complexity

If bidirectional switches are realized in a single semiconductor device, then device integration is improved, but production effort increases

Engineering Contradiction:
Improvedevice integrationVSAvoidproduction effort
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The semiconductor devices are designed with preliminary consideration for manufacturing, using standard monolithic integration techniques and common fabrication processes that are already established in the industry. The device structure is prepared in advance with standardized bond pad configurations and internal electrical connections, allowing for efficient production through batch processing and reducing the overall production effort despite the integrated complexity

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250022872A1Multi-device semiconductor chip with electrical access to devices at either side
Publication Date: 2025.01.16 INFINEON TECH AUSTRIA AG
  • US20250022872A1 patent drawing
  • US20250022872A1 patent drawing
  • US20250022872A1 patent drawing

AI summary

A semiconductor chip includes a semiconductor body having a main surface and a rear surface opposite the main surface, a first bond pad disposed on the main surface, a second bond pad disposed on the rear surface, a first switching device that is monolithically integrated in the semiconductor body and has a first input-output terminal that is electrically connected to the first bond pad, and a second switching device that is monolithically integrated in the semiconductor body and has a first input-output terminal that is electrically connected to the second bond pad.