Dual-Sided Epitaxial Source-Drain Formation Through a Separation Layer
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Solution Overview
Problem
There is a need for improved computational devices with reduced computation times and enhanced circuit structures, particularly in memory arrays, to support the increasing demand for modeling complex systems and improving computational efficiency.
Innovation Solution
The fabrication of epitaxial structures involves forming channel stack structures on both sides of a separation layer, with epitaxial material being deposited through holes in the layer to concurrently form source or drain structures, utilizing materials like silicon and silicon germanium for enhanced conductivity and insulation, and employing deposition methods such as low-pressure chemical vapor deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional fabrication processes are used to form source and drain structures, then manufacturing precision is maintained, but productivity is reduced due to sequential formation processes and inversion steps
Solution Approach 1:
The patent merges the formation of source and drain structures into a single concurrent deposition process. Epitaxial material is deposited through holes in the separation layer to form both source and drain structures simultaneously, eliminating the need for separate sequential formation steps and inversion operations, thereby significantly improving fabrication efficiency
Solution Approach 2:
The patent inverts the conventional fabrication sequence by forming channel stack structures on both sides of the separation layer before depositing source and drain structures. This inverted approach allows concurrent deposition through the separation layer holes, avoiding the need for wafer inversion steps required in conventional processes
2Productivity
If circuit structures are scaled down to improve computational efficiency, then computational performance is improved, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent segments the fabrication process into distinct stages: forming channel stack structures on both sides of the separation layer, creating holes through the separation layer, and then concurrent deposition of source and drain structures. This segmentation allows precise control of each stage independently, maintaining manufacturing precision even as feature sizes are scaled down for improved computational efficiency
Solution Approach 2:
The separation layer acts as an intermediary structure that enables precise alignment and concurrent deposition of source and drain structures. The holes formed through the separation layer serve as templates that guide the epitaxial deposition process, ensuring accurate feature formation at scaled dimensions while maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the concurrent formation of source and drain structures on opposite sides of a separation layer, enhancing the efficiency and conductivity of transistor devices, thereby improving computational performance and reducing the need for inversion processes.
Implementation Method 1
epitaxial material is subsequently deposited from one side of the separation layer, and through a hole structure to an opposite side of the separation layer, to concurrently form source or drain structures
Implementation Method 2
employing deposition methods such as low-pressure chemical vapor deposition
Data Source
AI summary
Techniques and mechanisms for providing epitaxial structures of an integrated circuit (IC). In an embodiment, an IC comprises a separation layer, and first and second channel stack structures at opposite surfaces of the separation layer. A first source or drain (SD) structure extends to the first channel stack structure, and a second SD structure extends to the second channel stack structure. A hole extends through the separation layer, wherein the first and second SD structures are formed concurrently by a deposition of an epitaxial (epi) material from one side of the hole. An insulator material of the separation layer facilitates separation of the first and second SD structures from each other during the epi deposition. In another embodiment, respective crystal orientations in the first and second SD structures each face the same direction along a vertical dimension which is orthogonal to the surfaces of the separation layer.