Dual-Sided Interconnect Bridge Vertical Power Routing
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Solution Overview
Problem
In integrated-circuit device packages, the real-estate limitations and power delivery issues due to the location of interconnect bridges hinder efficient integration and performance of multiple integrated-circuit chips.
Innovation Solution
A modular dual-sided interconnect bridge with a silicon portion and a metallization section, featuring through-silicon metal tracks and power-delivery paths, provides a shortened power delivery path between mother and daughter dice by routing power and ground directly from the bottom of the silicon portion, enhancing power-delivery network performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If interconnect bridges are employed to integrate multiple integrated-circuit chips within a package, then integration is achieved, but real-estate limitations and power delivery issues occur due to the location of the interconnect bridge
Solution Approach 1:
The patent transitions from traditional lateral interconnect bridges to vertical through-silicon via interconnects, utilizing the third dimension (depth) to route power and ground between chips. This vertical integration approach eliminates the need for lateral bridge structures, thereby resolving the real-estate limitation while maintaining integration capability.
Solution Approach 2:
The patent embeds through-silicon via interconnect structures within the silicon substrate itself, nesting the interconnect pathway inside the chip material. This nested approach allows power and ground to be delivered directly through the silicon, eliminating external bridge structures and optimizing space utilization.
2Adaptability or versatility
If interconnect bridges are employed to integrate multiple integrated-circuit chips within a package, then integration is achieved, but power delivery is affected by the location of the interconnect bridge
Solution Approach 1:
The patent routes power and ground through the vertical dimension using through-silicon vias, creating direct vertical pathways that are independent of lateral bridge location. This dimensional change ensures reliable power delivery regardless of chip layout, as the vertical via paths provide consistent electrical connectivity from substrate to die.
Solution Approach 2:
The through-silicon via structures act as intermediary conductive pathways, mediating the power and ground delivery between the substrate and the integrated circuits. These via intermediaries provide stable, location-independent electrical connections that ensure reliable power delivery throughout the package.
Data Source
AI summary
A dual-sided embedded multi-die interconnect bridge provides power and source conduits from the bridge bottom at a silicon portion, in short paths to dice on a die side of an integrated-circuit package substrate. Signal traces are in a metallization on the silicon portion of the dual-sided EMIB. Power, ground and signal vias all emanate from the dual-sided embedded multi-die interconnect bridge, with power and ground entering the bridge from central regions of the silicon portion.