Dual-Sided Plasma Chamber Layout for Low-Damage Substrate Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Traditional substrate processing methods face challenges in efficiently etching both sides of substrates without causing physical damage, particularly in advanced packaging technologies like EDS, EPS, and FOPLP, where sequential processing is time-consuming and prone to stress-induced damage during grinding and plasma processing.
Innovation Solution
A substrate processing apparatus equipped with a chamber member and remote plasma sources that allow concurrent etching of opposite sides of the substrate, utilizing a vertically oriented substrate carrier and inlet walls with distributed hole patterns to ensure uniform plasma distribution and minimize thermal loading and ion bombardment, thereby reducing physical damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sequential plasma etching is used to process both sides of the substrate, then complete etching of both sides is achieved, but processing time increases and the substrate must be turned over multiple times
Solution Approach 1:
The patent transitions from sequential single-sided plasma etching to concurrent dual-sided plasma etching by introducing a second plasma source positioned to treat the opposite side of the substrate simultaneously. This dimensional change in processing architecture allows both sides of the substrate to be etched at the same time, effectively doubling the processing throughput without requiring substrate manipulation.
Solution Approach 2:
The patent combines two plasma etching operations into a single concurrent process by integrating a second plasma source that operates simultaneously with the first. Both plasma sources work together to etch opposite sides of the substrate at the same time, merging what were previously separate sequential steps into a unified parallel process.
2Loss of substance
If traditional grinding is used to thin organic insulating material, then material removal is achieved, but chip or component damage occurs due to external stress
Solution Approach 1:
The patent replaces the mechanical grinding process with a plasma-based chemical etching process. Instead of using mechanical abrasion that applies external stress and risks damaging chips or components, the plasma process uses reactive species to chemically remove the organic insulating material, achieving material removal without mechanical contact or stress.
Solution Approach 2:
The patent changes the fundamental parameter of material removal from mechanical force-based grinding to chemistry-based plasma etching. By controlling plasma parameters such as gas composition, power, and pressure, the process achieves controlled material removal rates while eliminating the harmful mechanical stress that causes damage in traditional grinding.
3Productivity
If high ion bombardment energy is used in plasma etching, then etching rate increases, but physical damage to the substrate increases
Solution Approach 1:
The patent optimizes plasma process parameters to achieve a balance between etching rate and substrate damage. By controlling ion energy, gas composition, and plasma density, the process maintains high productivity while minimizing physical damage through parameter optimization rather than extreme values.
Solution Approach 2:
The patent applies different plasma conditions to different sides of the substrate simultaneously, allowing each side to be processed with optimized parameters suited to its specific requirements. This local quality approach enables high etching rates where needed while protecting sensitive areas from excessive ion bombardment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables efficient and damage-reduced etching of substrates, enhancing processing speed and yield by maintaining low thermal loads and adjusting ion bombardment energy, which can boost etching rates by 100% to 400% compared to traditional methods.
Implementation Method 1
plasma processing systems may be used to thin the unnecessary organic insulating substrates or materials
Implementation Method 2
the top surface is allowed to contact reactive gas or plasma from there-above
Data Source
AI summary
A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.