Dual-Sided Semiconductor Cooling With Insulated Heat Paths
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently managing high heat generation and maintaining reliability in harsh environments, particularly in power semiconductor applications, where conventional cooling methods are complex and may lead to electrical short circuits and increased product thickness.
Innovation Solution
A dual cooling semiconductor device is designed with thermally conductive electrical insulation layers, internal metal plates, and a metal block insertion system, along with a simplified assembly process using molded resin flowing-out prevention structures and a one-layer interconnection layer for connecting with external cooling structures, enhancing thermal conductivity and preventing electrical short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional cooling methods are used in power semiconductor devices, then cooling function is provided, but the assembly process becomes complex and product thickness increases
Solution Approach 1:
The patent combines multiple cooling functions into a single integrated cooling structure that includes both first and second cooling portions. This cooling structure is further integrated with an insulating structure to form a unified assembly, eliminating the need for separate cooling components and simplifying the overall assembly process while maintaining effective cooling performance.
Solution Approach 2:
The cooling structure is divided into distinct first and second cooling portions, each with specific functional characteristics. The first cooling portion contacts the power semiconductor chip for direct cooling, while the second cooling portion provides additional cooling functionality. This segmentation allows for optimized cooling performance without increasing overall assembly complexity.
2Temperature
If conventional cooling structures are used, then cooling function is provided, but electrical short circuits and microcracks may occur
Solution Approach 1:
An insulating structure comprising an insulating layer and an insulating protrusion is introduced as an intermediary between the cooling structure and the power semiconductor chip. This insulating structure prevents direct electrical contact that could cause short circuits, while the insulating protrusion specifically prevents microcrack formation by providing mechanical support and stress relief. The cooling structure remains thermally effective while electrical insulation is ensured.
3Temperature
If multiple separate cooling components are assembled, then cooling function is achieved, but assembly time and manufacturing cost increase
Solution Approach 1:
The cooling structure and insulating structure are merged into a single integrated assembly where the insulating structure is formed as an integral part of the cooling structure. This integration eliminates separate assembly steps for installing cooling components and insulating components separately, significantly improving assembly efficiency and reducing manufacturing costs while maintaining effective cooling performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves cooling efficiency, simplifies the assembly process, reduces product thickness, and enhances reliability by preventing microcracks and electrical short circuits, while maintaining high thermal conductivity and cost-effectiveness.
Implementation Method 1
a first cooling structure and a second cooling structure each including a thermally conductive electrical insulation layer
Implementation Method 2
a first internal metal plate formed on an upper surface of the second cooling structure; a second internal metal plate formed on a lower surface of the first cooling structure
Data Source
AI summary
Provided are a dual cooling semiconductor device and a dual cooling semiconductor system. The dual cooling semiconductor device includes: a first cooling structure and a second cooling structure each including a thermally conductive electrical insulation layer; a first internal metal plate formed on an upper surface of the second cooling structure; a second internal metal plate formed on a lower surface of the first cooling structure; a third internal metal plate formed on the first internal metal plate and supporting a semiconductor chip; a metal block formed on the semiconductor chip; and a fourth internal metal plate formed below the second internal metal plate and having a metal block insertion hole into which the metal block is inserted.