Dual-Sided TSV Structure for Semiconductor Miniaturization
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Solution Overview
Problem
The miniaturization of integrated circuits (ICs) is hindered by the size of through silicon vias (TSVs) in IC packaging technology, which affects the electrical performance and integration level, particularly with the development of high bandwidth memories where smaller sizes are required.
Innovation Solution
A semiconductor structure and forming method that involves a substrate with a dielectric layer and two TSV structures extending from opposite sides of the substrate, contacting at a preset opening width, allowing for reduced size and improved electrical connection through a metal liner, thereby shortening manufacturing lengths and reducing TSV sizes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional single-sided TSV structures are used, then manufacturing process is simpler, but TSV size and manufacturing length cannot be reduced sufficiently
Solution Approach 1:
The through-silicon via structure is segmented into two separate TSV structures formed on opposite sides of the substrate. Each TSV extends partway through the substrate and they meet at an interface, dividing the single long via into two shorter segments that can be independently formed and controlled
Solution Approach 2:
The via formation process is extended from a single-sided approach to a dual-sided approach, utilizing the third dimension (substrate thickness) from both directions. This allows the TSVs to approach each other from opposite sides and meet in the middle, effectively halving the via length
2Reliability
If TSV opening width is increased, then electrical performance is improved, but device size increases and miniaturization is hindered
Solution Approach 1:
The electrical connection path is segmented into two separate TSV structures that meet at an interface. Each TSV can have optimized dimensions independent of the other, allowing for smaller opening widths while maintaining adequate electrical performance through the combined dual-sided structure
Solution Approach 2:
Instead of forming one large TSV from one side, the approach inverts to forming two smaller TSVs from opposite sides that converge at an interface. This reversal of the conventional single-sided approach allows for reduced opening width while achieving the same electrical connection function
3Productivity
If substrate thickness is increased, then device integration is improved, but TSV manufacturing length increases and miniaturization is hindered
Solution Approach 1:
The through-silicon via manufacturing process is segmented into two separate formation processes from opposite sides of the substrate. Each TSV is manufactured independently to a controlled length, and they meet at an interface, dividing the total manufacturing length into two manageable segments
Solution Approach 2:
The via formation utilizes bidirectional approach from both sides of the substrate thickness dimension. This allows the effective via length to be controlled by the meeting point of the two TSVs, enabling independent optimization of substrate thickness and via length
Data Source
AI summary
The present disclosure provides a semiconductor structure and a forming method thereof. The semiconductor structure includes: a substrate, including a first side and a second side opposite to each other; a dielectric layer, provided at the first side of the substrate; a first through silicon via (TSV) structure, extending from a top surface of the dielectric layer to the first side of the substrate; and a second TSV structure, extending from the second side of the substrate to the first side of the substrate, coming into contact with the first TSV structure at the first side of the substrate, and having a preset opening width.