Dual-Stage Exposure for Fine Semiconductor Patterns
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Solution Overview
Problem
The existing double patterning techniques, such as the LELE method, require a large number of processes, increasing manufacturing costs and complexity in achieving fine patterns beyond the resolution limit of photolithography exposure devices.
Innovation Solution
A semiconductor device manufacturing method involving coating a photosensitive material, exposing it with a first and second mask, followed by positive-tone and negative-tone development using specific developers, allowing for the formation of fine patterns with reduced process steps by aligning masks based on alignment marks and utilizing polarity-changeable resist.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the LELE method is used to form fine patterns beyond the resolution limit, then the pattern resolution is improved, but the number of process steps increases
Solution Approach 1:
The patent combines two exposure processes into a single dual-stage exposure operation. The first exposure forms initial patterns, and the second exposure forms additional patterns in the same photosensitive material layer without requiring intermediate etching steps. This merging of operations reduces the total number of process steps from four (coating, first exposure, etching, second exposure) to three (coating, dual-stage exposure, developing), while achieving the same fine pattern resolution as the LELE method.
2Manufacturing precision
If the LELE method is used to form fine patterns, then the pattern resolution is improved, but the manufacturing cost increases
Solution Approach 1:
By merging the two separate exposure processes into a single dual-stage exposure operation on the same photosensitive material layer, the patent eliminates the need for intermediate etching steps and reduces the number of times the wafer must be loaded and unloaded from the exposure device. This reduces manufacturing cost by decreasing process time, reducing material consumption, and lowering the overall complexity of the manufacturing sequence.
3Manufacturing precision
If the LELE method is used to form fine patterns, then the pattern resolution is improved, but the process complexity increases
Solution Approach 1:
The patent merges multiple discrete process steps into a unified dual-stage exposure process. Instead of performing separate coating, first exposure, etching, and second exposure operations, the method performs coating followed by a single dual-stage exposure that accomplishes both patterning operations, then a single developing step. This reduces process complexity by eliminating intermediate etching steps and reducing the number of process transitions and equipment handoffs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of desired fine patterns with a reduced number of steps compared to the LELE process, achieving patterns with features as small as 76 nm between centers of adjacent developed regions, thereby reducing manufacturing costs and complexity.
Implementation Method 1
exposing the photosensitive material using a first exposure mask; exposing the photosensitive material using a second exposure mask
Data Source
AI summary
A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.