Dual-Stage Substrate Processing Apparatus Gas Consumption
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Solution Overview
Problem
Existing substrate processing technologies face challenges in reducing gas consumption, ensuring uniform deposition, maintaining process efficiency, and preventing particle contamination during semiconductor device fabrication.
Innovation Solution
A substrate processing apparatus and method that utilize a dual-stage process chamber with separate gas supply units for each stage, allowing for alternating pulses of different gases to be supplied to the substrates at varying pressures, thereby optimizing deposition efficiency and reducing gas usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple gases are supplied simultaneously into one process chamber for simultaneous deposition on multiple substrates, then deposition efficiency is improved, but gas consumption increases and uniform deposition becomes difficult to maintain
Solution Approach 1:
The process chamber is divided into multiple independent gas supply regions, with each region having its own gas supply unit and showerhead. This allows different gases to be supplied to different substrates simultaneously without mixing, maintaining deposition efficiency while reducing overall gas consumption through targeted delivery.
Solution Approach 2:
Each substrate receives customized gas supply according to its specific deposition requirements. The system provides local quality control by adjusting gas type, flow rate, and pressure independently for each substrate position, enabling uniform deposition while optimizing gas usage for each location.
2Productivity
If multiple gases are supplied simultaneously into one process chamber, then deposition efficiency is improved, but deposition uniformity deteriorates
Solution Approach 1:
The chamber is segmented into multiple independent gas delivery zones with separate showerheads positioned above each substrate. This physical segmentation prevents gas mixing between different substrate regions, ensuring uniform deposition conditions for each substrate while maintaining high productivity through parallel processing.
Solution Approach 2:
Individual showerheads act as intermediaries between the gas supply units and substrates. Each showerhead delivers its specific gas type uniformly across its designated substrate area, preventing gas mixing and maintaining deposition uniformity while enabling simultaneous multi-substrate processing.
3Device complexity
If a single gas supply unit is used for all substrates, then equipment complexity is reduced, but deposition control and gas consumption efficiency deteriorate
Solution Approach 1:
The system uses multiple gas supply units that can be independently controlled but follow the same basic structural design pattern. Each unit is modular and can be configured for different gas types and flow rates, providing versatile deposition control while maintaining reasonable equipment complexity through standardized modules.
4Ease of manufacture
If gases are supplied continuously, then deposition process is simple, but gas consumption increases
Solution Approach 1:
The system employs pulsed gas supply instead of continuous supply. Gas is delivered in controlled pulses to each substrate only when needed, with the ability to pause or adjust flow rates. This periodic action reduces gas consumption significantly while maintaining deposition quality through precise temporal control of gas delivery.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves reduced gas consumption, maintains uniform deposition across multiple substrates, prevents particle contamination, and does not increase overall process time, thereby enhancing the efficiency and reliability of semiconductor device fabrication.
Implementation Method 1
A gas may be sprayed onto a substrate in a deposition process for fabricating semiconductor devices
Implementation Method 2
performing a first deposition process on the first substrate; and performing a second deposition process on the second substrate
Data Source
AI summary
Substrate processing apparatuses and methods are provided. A substrate processing apparatus includes placing a first substrate on a first stage in a process chamber, placing a second substrate on a second stage in the process chamber, performing a first deposition process on the first substrate, and performing a second deposition process on the second substrate. The performing the first deposition process includes supplying the first substrate with a first gas. The performing the second deposition process includes supplying the second substrate with a second gas. The supplying the first substrate with the first gas includes alternately and repeatedly performing steps of filling a first gas supply unit with the first gas for a first time length, and supplying the first substrate with the first gas for a second time length. The second time length is greater than the first time length.