Dual-Substrate EBG Device for High-Frequency Bandgap
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Solution Overview
Problem
Conventional Electromagnetic Bandgap (EBG) devices face challenges in manufacturing high upper bandgap frequencies and resonant frequencies, particularly in high-frequency applications, due to manufacturing process imprecision and cost considerations, making it difficult to achieve desired performance without using expensive and atypical processes.
Innovation Solution
The solution involves a dual-substrate EBG device structure with overlapping periodic lattices of conducting vias, where the second substrate's vias have a smaller diameter than the first substrate's vias, allowing for closer spacing and higher bandgap frequencies without interfering with coplanar waveguide inputs and outputs, and optionally incorporating defect resonators to achieve specific resonant frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional single-substrate EBG devices are used, then manufacturing is simpler, but upper bandgap frequency and resonant frequency are limited below 65 GHz
Solution Approach 1:
The EBG device is divided into two separate substrates, each carrying a periodic lattice of conducting vias. The first substrate has vias with a first diameter, while the second substrate has vias with a second diameter that is smaller than the first diameter. This segmentation allows each substrate to be optimized independently for high-frequency performance while maintaining manufacturing feasibility.
Solution Approach 2:
The invention transitions from a single-substrate two-dimensional structure to a multi-layer three-dimensional structure with two substrates positioned at different heights. The substrates are spaced apart vertically, with conducting vias extending through each substrate and making contact between layers, enabling higher bandgap frequencies unattainable in conventional planar configurations.
2Manufacturing precision
If via spacing is reduced to increase bandgap frequency, then upper bandgap frequency increases, but coplanar waveguide inputs and outputs are interfered with
Solution Approach 1:
By moving the periodic lattice structure to a second substrate positioned vertically above the first substrate, the invention separates the high-frequency bandgap function (requiring closely spaced vias) from the waveguide input/output interfaces. The vertical spacing between substrates allows the coplanar waveguides to operate on the first substrate without interference from the closely spaced vias on the second substrate, while still achieving high upper bandgap frequencies.
3Manufacturing precision
If expensive atypical manufacturing processes are used, then high upper bandgap frequencies can be achieved, but manufacturing cost increases
Solution Approach 1:
Dividing the device into two substrates allows each to be manufactured using standard, cost-effective processes. The conducting vias in each substrate can be formed using conventional via drilling and plating techniques, and the substrates can be assembled using standard bonding methods. This segmentation avoids the need for expensive atypical single-step manufacturing processes while achieving the required high-frequency performance.
Solution Approach 2:
The invention uses parameter changes in the via diameters between substrates (first diameter on first substrate, smaller second diameter on second substrate) to optimize electromagnetic performance. This parameter variation allows achievement of upper bandgap frequencies greater than 65 GHz through geometric optimization rather than expensive manufacturing processes, maintaining cost-effectiveness while improving performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables EBG devices to achieve upper bandgap frequencies and resonant frequencies of greater than 65 GHz, surpassing conventional devices without requiring expensive manufacturing processes, while maintaining effective signal attenuation within the bandgap.
Implementation Method 1
A typical EBG device functions to block or suppress the propagation of electromagnetic radiation that falls within a certain defined frequency band known as a stopband or bandgap
Implementation Method 2
a defect resonator in an EBG device typically creates an area of resonance in the EBG device by localizing energy within the structure, allowing transmission of a narrow frequency within the stopband or bandgap
Data Source
Figure 1A~1B
Figure 1C~1D
Figure 2
AI summary
A high-frequency Electromagnetic Bandgap (EBG) device (70,90), and a method (100) for making the device are provided. The device (70,90) includes a first substrate (72) including multiple conducting vias (74) forming a periodic lattice. The vias (74) ofthe first substrate (72) extend from the lower surface ofthe first substrate (72) to the upper surface of the first substrate (72). The device (70,90) also includes a second substrate (76) having multiple conducting vias (78) forming a periodic lattice. The vias (78) ofthe second substrate (76) extend from the lower surface of the second substrate (76) to the upper surface of the second substrate (76). The second substrate (76) is positioned adjacent to, and overlapping, the first substrate (72), such that the lower surface of the second substrate (76) is in contact with the upper surface of the first substrate (72), and such that a plurality of vias (78) of the second substrate (76) are in contact with a corresponding plurality of vias (74) of the first substrate (72).