Dual Substrate Support for Supercritical Fluid Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In substrate processing using supercritical fluids, the middle region of substrates is prone to bending due to the weight of liquefied solvents, and the process is time-consuming due to the need for maintaining high pressure and temperature, which affects the efficiency of the dry process.
Innovation Solution
A substrate processing apparatus with a dual support system, where the first support system contacts the peripheral region of the substrate in an open state and the second support system, positioned higher, supports the middle region in a closed state, along with a fluid supply and discharge system that adjusts the supercritical fluid pressure and flow rates to optimize processing time and prevent substrate bending.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single substrate support contacts the peripheral region of the substrate, then the substrate can be supported during loading, but the middle region of the substrate bends due to the weight of the liquefied solvent during processing
Solution Approach 1:
The substrate support system is segmented into two distinct supports: a first substrate support that contacts the peripheral region and a second substrate support that contacts the middle region. This segmentation allows each support to perform its specific function independently, preventing the middle region from bending under the weight of the liquefied solvent while maintaining overall substrate stability during loading and processing
Solution Approach 2:
The second substrate support is positioned at a different height (higher position) than the first substrate support, creating a vertical dimension difference. This dimensional change allows the middle region of the substrate to be elevated and supported separately from the peripheral region, effectively counteracting the bending force caused by the liquefied solvent weight without interfering with the peripheral support function
2Reliability
If a large amount of supercritical fluid is used to maintain supercritical phase with high pressure and high temperature, then the substrate processing can be performed, but the processing time increases
Solution Approach 1:
The system dynamically changes the parameters of the supercritical fluid by adjusting the supply flow rate based on the chamber pressure state. When pressure is below the critical point, a higher flow rate is supplied to efficiently reach the supercritical state. When pressure exceeds the critical point, the flow rate is reduced to maintain the supercritical phase. This parameter adjustment optimizes both processing effectiveness and time efficiency
Solution Approach 2:
The control unit continuously monitors the chamber pressure and uses this feedback information to adjust the supercritical fluid supply flow rate in real-time. This closed-loop control ensures that the system maintains optimal performance by supplying adequate fluid to reach and maintain supercritical conditions while avoiding excessive fluid supply that would unnecessarily extend processing time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the likelihood of substrate bending and significantly decreases the processing time by optimizing the use of supercritical fluids, enhancing the efficiency of the dry process and improving productivity.
Implementation Method 1
a first supply port configured to supply a supercritical fluid to a first space under the substrate in the chamber; a second supply port configured to supply the supercritical fluid to a second space above the substrate in the chamber
Implementation Method 2
an exhaust port configured to exhaust the supercritical fluid from the chamber
Data Source
AI summary
A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.