Substrate Film Deposition with Dual-Tank Flash Flow Uniformity Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for forming films on semiconductor substrates face challenges in achieving uniformity of substrate in-plane film thickness, particularly in the process of forming nitride films, where precursor and inert gases are alternately supplied, leading to issues with multiple adsorption and film quality.
Innovation Solution
A technique involving a substrate processing apparatus that supplies precursor and inert gases from separate tanks with different concentrations, using a flash flow method to suppress multiple adsorption by colliding gases with varying concentrations, thereby improving film uniformity and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If precursor gas and inert gas are alternately supplied from a single tank, then the film formation process can be completed, but the substrate in-plane film thickness uniformity deteriorates due to multiple adsorption
Solution Approach 1:
The gas supply system is segmented into multiple tanks (first tank and second tank), each supplying gas through separate suppliers. The first tank supplies precursor gas and inert gas alternately, while the second tank supplies reaction gas. This segmentation prevents multiple adsorption by ensuring that gases are supplied from distinct sources with different concentrations, thereby improving substrate in-plane film thickness uniformity.
Solution Approach 2:
Different regions of the substrate receive gases with different concentrations from different suppliers. The first supplier provides precursor gas and inert gas with specific concentrations, while the second supplier provides reaction gas with different concentrations. This local quality variation ensures uniform film formation across the substrate by compensating for concentration differences in different areas.
2Manufacturing precision
If precursor gas concentration in the first tank is set different from the second tank, then film uniformity improves, but the system complexity increases
Solution Approach 1:
The precursor gas concentration parameter is deliberately changed between the first tank and the second tank. The first tank is configured with a specific precursor gas concentration, while the second tank uses a different concentration. This parameter change is controlled through separate suppliers that can independently adjust gas concentrations, thereby achieving uniform film formation without requiring complex additional equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of wafer in-plane film thickness and film quality, reduces the thickness of the first layer, and improves the nitriding process, resulting in higher wet etching resistance and reduced gas costs.
Implementation Method 1
supplying a precursor gas and an inert gas to the substrate from a first supplier, and supplying a reaction gas to the substrate from a second supplier different from the first supplier, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in a first tank is supplied to the substrate from a first supplier
Implementation Method 2
issues with multiple adsorption and film quality
Implementation Method 3
forming a film such as a nitride film on a substrate by alternately supplying a precursor gas and a reaction gas to the substrate
Data Source
AI summary
Provided is a method of processing a substrate including: forming a film on the substrate by performing a cycle, multiple times, including non-simultaneously performing: (a) supplying a precursor gas and inert gas to the substrate; and (b) supplying a reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration or amount of the precursor gas differs between the first and second tank. Further, in (a), the process chamber is filled with the inert gas before the precursor gas and the inert gas are supplied to the substrate.