Dual Temperature Heater Substrate Support Centering
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Solution Overview
Problem
Current substrate processing methods experience delays and decreased device yield due to variance in heating temperatures during pre-treatment and deposition processes, leading to increased processing time and costs.
Innovation Solution
An apparatus and method for positioning and heating a substrate in a processing chamber using a substrate support assembly with centering members that allow for precise temperature control and efficient transfer between processing temperatures without changing the heater's setpoint, utilizing a plurality of centering fingers that support and center the substrate at different temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the heater temperature is changed from the first temperature to the second temperature between pre-treatment and deposition processes, then the substrate can be heated to the required deposition temperature, but the processing time increases and device yield decreases
Solution Approach 1:
The substrate is pre-heated to the second temperature (deposition temperature) during the pre-treatment process using a heating element positioned near the substrate support. This preliminary heating action ensures that when the substrate is transferred to the deposition chamber, it is already at the required temperature, eliminating the need for temperature change delays and allowing immediate deposition processing.
2Adaptability or versatility
If the substrate is placed on a substrate support with a heater for both pre-treatment and deposition processes, then the same equipment can be used for both processes, but temperature variance causes processing delays
Solution Approach 1:
The heating system is segmented into two independent heating elements: one heater in the pre-treatment chamber and another heater in the deposition chamber. This segmentation allows each chamber to independently maintain its required temperature without interference, enabling continuous processing and eliminating temperature adjustment delays between processes.
Solution Approach 2:
A heated transfer chamber or heated transfer mechanism serves as an intermediary between the pre-treatment and deposition chambers. This intermediary maintains the substrate at the required temperature during transfer, preventing temperature loss and enabling seamless transition between processes without stopping the deposition sequence.
3Temperature
If the substrate is heated to a higher second temperature during deposition compared to the first temperature during pre-treatment, then the deposition process can be performed, but the heater must be reheated causing delays
Solution Approach 1:
The substrate is pre-heated to the higher second temperature (deposition temperature) during the pre-treatment process using a heating element positioned near the substrate support. This preliminary heating action ensures that when the substrate is transferred to the deposition chamber, it is already at the required temperature, eliminating the need for additional heating time during deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces substrate processing time, increases device yield, and lowers costs by enabling back-to-back process steps without waiting for temperature changes, thus optimizing system throughput and cost-effectiveness.
Implementation Method 1
the substrate may be heated, for example, using an anneal process, to a first temperature prior to the deposition process. During the deposition process, the substrate is heated to a second temperature different from the first temperature
Implementation Method 2
a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface
Implementation Method 3
The first end portion is movable between a first position and a second position. Movement from the first position to the second position causes the centering member to release the peripheral edge of the substrate and movement from the second position to the first position causes the centering member to push the substrate in a direction toward the reference axis
Data Source
AI summary
A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.