Dual-TFT Display Layout for Low-Power Flexible Panels
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Solution Overview
Problem
Current technologies face challenges in manufacturing display devices that consume low power, particularly for portable and wearable devices, which require efficient power management without compromising performance.
Innovation Solution
The implementation of a display device design that incorporates a first thin-film transistor with a polycrystalline semiconductor layer and a second thin-film transistor with an oxide semiconductor layer, along with a storage capacitor structure that overlaps electrodes, to reduce power consumption and simplify the manufacturing process by forming openings and contact holes through the same process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional thin-film transistor manufacturing processes are used, then device complexity is reduced, but power consumption increases
Solution Approach 1:
The patent divides the thin-film transistor into two distinct types: one with a polycrystalline semiconductor layer and another with an oxide semiconductor layer. This segmentation allows each transistor type to be optimized for specific functions, with the oxide semiconductor transistor specifically designed for low power consumption operations, thereby resolving the contradiction between reduced power consumption and increased device complexity.
2Ease of manufacture
If different depth openings are formed in bending and active areas, then manufacturing precision is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent merges the formation process of openings in the bending area with the formation process of contact holes in the active area by making them the same depth. This allows both structures to be formed simultaneously through a single etching process, eliminating the need for separate process steps and thereby simplifying manufacturing while maintaining precision.
3Reliability
If electrode overlap structures are added to form storage capacitors, then device functionality is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent designs the electrode overlap structure to serve dual functions: it forms the storage capacitor necessary for device operation while simultaneously utilizing existing interlayer insulation films and electrode structures already present in the manufacturing process. This multi-functionality approach adds the required capacitor functionality without requiring separate dedicated manufacturing steps, thereby improving device reliability while minimizing manufacturing complexity.
Data Source
AI summary
Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.