Dual-TFT Display Pixel Circuit With Oxide Capacitor for Low Power
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Solution Overview
Problem
Display apparatuses face challenges in achieving high integration and reducing power consumption due to the complexity of thin-film transistor configurations and the need for efficient light emission control.
Innovation Solution
The display apparatus incorporates a substrate with a first thin-film transistor using a silicon semiconductor and a second thin-film transistor using an oxide semiconductor, along with a capacitor structure that includes a lower and upper electrode, to enhance integration and reduce power consumption by leveraging the high carrier mobility and low leakage current of oxide semiconductors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of thin-film transistors electrically connected to a single display element is increased to accurately control light emission, then the control precision is improved, but the device complexity and power consumption increase
Solution Approach 1:
The gate electrode of the first thin-film transistor is merged with one electrode of the storage capacitor, forming an integrated structure that reduces the number of separate components while maintaining precise control functionality
Solution Approach 2:
The gate electrode serves dual functions as both the control electrode for the thin-film transistor and one electrode of the storage capacitor, allowing a single component to perform multiple functions and reducing overall device complexity
2Measurement precision
If the number of thin-film transistors electrically connected to a single display element is increased to accurately control light emission, then the control precision is improved, but the power consumption increases
Solution Approach 1:
The storage capacitor maintains the gate voltage continuously between refresh cycles, eliminating the need for continuous power supply and reducing overall power consumption while maintaining precise control
Solution Approach 2:
The integrated structure of the gate electrode and capacitor electrode reduces the number of separate components, which reduces leakage paths and associated power consumption
3Loss of energy
If a capacitor structure with oxide semiconductor electrodes is implemented, then the leakage current is reduced and power consumption decreases, but the manufacturing process complexity increases
Solution Approach 1:
The storage capacitor electrodes are formed using oxide semiconductor material that exhibits both semiconductor and conductive properties, creating a composite functional material that reduces leakage current while being compatible with existing manufacturing processes
Solution Approach 2:
The electrical parameters of the capacitor electrodes are changed by using oxide semiconductor material with specific properties (high resistance when off, good conductivity when on), which reduces leakage current through parameter optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a high-resolution display with reduced power consumption and improved light emission control, enabling efficient operation even at low-frequency driving without significant voltage drop or color changes.
Implementation Method 1
leverage the high carrier mobility and low leakage current of oxide semiconductors
Implementation Method 2
a capacitor structure that includes a lower and upper electrode
Data Source
AI summary
A display apparatus includes a substrate including a display area in which a display element is arranged, a first thin-film transistor arranged in the display area and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, the first semiconductor layer including a silicon semiconductor, a first interlayer insulating layer covering the first gate electrode, a second thin-film transistor on the first interlayer insulating layer and including a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer including an oxide semiconductor, and an upper electrode arranged on the first interlayer insulating layer and including a same material as that of the second semiconductor layer and at least overlapping the first gate electrode.