Dual-TFT Pixel Circuit Layout for Low-Power Light Emission Control

The patent segments the thin film transistor population by material type: oxide semiconductor TFTs are used for switching elements (switch TFTs) where low leakage is critical, while silicon semiconductor TFTs are used for driving elements (drive TFTs) where high mobility is critical. This segmentation allows each TFT type to be optimized for its specific function, reducing the total number of TFTs needed while maintaining control precision and lowering overall power consumption.

The patent applies local quality by assigning different semiconductor materials to different functional locations within the pixel circuit. Oxide semiconductor TFTs are strategically placed in switching positions where low off-state current is essential, while silicon semiconductor TFTs are placed in driving positions where high carrier mobility is essential. This localized material assignment optimizes performance at each location while reducing total power consumption.

The patent achieves high integration by segmenting the pixel circuit into compact functional units using oxide semiconductor TFTs for switching and silicon semiconductor TFTs for driving. The oxide semiconductor TFTs provide low leakage currents that reduce power consumption, while the silicon semiconductor TFTs provide high mobility that allows for smaller device dimensions. This segmented approach enables compact pixel circuits with high area efficiency while maintaining low power consumption.

The patent employs composite materials by combining oxide semiconductor and silicon semiconductor TFTs within the same pixel circuit. This composite structure leverages the complementary strengths of both materials: oxide semiconductor for low power consumption and silicon semiconductor for high performance. The result is a highly integrated pixel circuit that achieves both small area and low power consumption simultaneously.