Dual-TFT Display Pixel Stack for Wider Driving Voltage Range
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-resolution display devices face challenges in maintaining driving voltage ranges due to decreased driving current as the number of pixels increases, particularly when using transistors with oxide semiconductor active layers, which require longer channel regions and increased area, making it difficult to implement high-resolution displays with a large number of pixels per unit area.
Innovation Solution
The display device incorporates transistors with different gate capacitances by varying the distance between the active layer and the gate electrode, using polysilicon for some transistors and oxide semiconductors for others, and adjusting the thickness of gate insulating layers to secure desired element characteristics, allowing for a wider driving voltage range and improved resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of pixels is increased to achieve high resolution, then the display resolution is improved, but the driving current of each pixel decreases
Solution Approach 1:
The patent changes the material parameter of the transistor active layer from oxide semiconductor to polysilicon, which fundamentally alters the electrical characteristics and enables higher driving current output. This material substitution allows the transistor to maintain sufficient driving current even as pixel density increases, thereby resolving the contradiction between high resolution and adequate driving current.
2Area of moving object
If oxide semiconductor active layers are used, then the transistor area is reduced, but the channel region length must be increased which conflicts with high-resolution requirements
Solution Approach 1:
The patent changes the material parameter of the active layer from oxide semiconductor to polysilicon, which fundamentally alters the electrical characteristics and enables higher driving current output. This material substitution allows the transistor to maintain sufficient driving current even as pixel density increases, thereby resolving the contradiction between high resolution and adequate driving current.
3Measurement precision
If the number of pixels is increased, then the display resolution is improved, but the driving voltage range decreases
Solution Approach 1:
The patent changes the material parameter of the transistor active layer from oxide semiconductor to polysilicon, which fundamentally alters the electrical characteristics and enables higher driving current output. This material substitution allows the transistor to maintain sufficient driving current even as pixel density increases, thereby resolving the contradiction between high resolution and adequate driving current.
Data Source
AI summary
A display device is provided. The display device comprises a substrate, a first buffer layer on the substrate, a first semiconductor layer on the first buffer layer and including a first active layer, a first gate insulating layer on the first semiconductor layer and the first buffer layer and covering the first active layer, a first conductive layer on the first gate insulating layer and including a first gate electrode, a second conductive layer on the first conductive layer and including a first source/drain electrode, a first interlayer insulating layer on the first conductive layer, a second semiconductor layer on the first interlayer insulating layer and including a second active layer, a second gate insulating layer on the second semiconductor layer and covering the second active layer, and a third conductive layer on the second gate insulating layer and including a second gate electrode and a second source/drain electrode, wherein the first gate insulating layer and the second gate insulating layer include different insulating materials.