Dual-Trench Gettering for Semiconductor Noise Suppression
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Solution Overview
Problem
Existing semiconductor manufacturing techniques face challenges in effectively suppressing noise and leakage current caused by heavy metal and crystal defects, as they are susceptible to process variations and limited by the design of the gettering region, which can become a noise source and restrict element design.
Innovation Solution
A method involving the formation of a gettering region by ion implantation through a first trench on a semiconductor substrate, followed by the creation of a second trench with a shallower bottom surface, to effectively isolate and manage impurities and defects, thereby reducing noise and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gettering region is arranged on the side face of an element isolation portion to suppress charge emission, then metal impurity gettering capability is improved, but the technique is susceptible to process variations and temperature limitations
Solution Approach 1:
The gettering structure is divided into two distinct trenches: a first trench extending to a first depth and a second trench extending to a second depth (shallower than the first). This segmentation allows independent optimization of each trench's function, reducing susceptibility to process variations while maintaining effective impurity gettering
Solution Approach 2:
The invention changes the depth parameter of the trenches, with the first trench having a greater depth than the second trench. This parameter differentiation enables the deeper first trench to provide primary gettering while the shallower second trench provides additional control, making the overall structure less sensitive to process variations
2Reliability
If a gettering region is formed to trap metal impurities, then impurity management is improved, but the defect itself becomes a noise generation source and limits element design
Solution Approach 1:
The invention extracts the problematic gettering function from a single continuous region and distributes it across two separate trenches with different depths. This extraction separates the primary gettering function (first trench) from the secondary control function (second trench), reducing the likelihood that the gettering structure itself becomes a noise source while maintaining impurity management effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the suppression of noise and leakage current, allowing for more robust semiconductor apparatus design and manufacturing processes, independent of temperature limitations and process variations.
Implementation Method 1
forming a gettering region by implanting ions in the semiconductor substrate through the first trench
Implementation Method 2
arranging a gettering region on the side face of an element isolation portion, thereby reducing noise
Data Source
AI summary
A method of manufacturing a semiconductor apparatus, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.