Dual-Valve Chamber Pressure Control for High-Vacuum Substrate Processing

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Solution Overview

Problem

Existing substrate processing apparatuses face issues with substrate scratching and particle adhesion due to friction, and the pressure control valves fail to support wideband pressure control in high vacuum environments, limiting film formation under stringent conditions.

Innovation Solution

A substrate processing apparatus with a process chamber, exhaust line, bypass line, and pressure control system that includes two pressure regulation valves, allowing for controlled pressure adjustments and leak checks to achieve wideband and high vacuum pressure control, reducing friction and particle generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a single pressure regulation valve is used, then the device complexity is reduced, but the pressure control capability is limited to either wideband or high vacuum range only

Engineering Contradiction:
Improvepressure control capabilityVSAvoidnumber of pressure regulation valves
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The pressure regulation system is divided into two independent pressure regulation valves: a first pressure regulation valve for wideband pressure control and a second pressure regulation valve for high vacuum pressure control. Each valve is responsible for a specific pressure range, allowing the system to achieve both wideband and high vacuum pressure control capabilities simultaneously without excessive complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The pressure control system achieves multi-functionality by combining two pressure regulation valves that can operate independently or in coordination. The system can switch between wideband pressure control mode (using the first valve) and high vacuum pressure control mode (using the second valve), providing universal pressure control capability across different operating conditions

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If pressure is reduced rapidly from atmospheric pressure to high vacuum, then the processing time is reduced, but substrate scratching and particle adhesion occur due to friction

Engineering Contradiction:
Improveprocessing timeVSAvoidsubstrate scratching and particle adhesion
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

Before rapid pressure reduction, the substrate surface is prepared by applying a protective coating or treatment to the support part that contacts the substrate. This preliminary action reduces friction and prevents particle adhesion during the subsequent rapid pressure reduction process, allowing fast processing without substrate damage

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The pressure reduction process is made dynamic by using a first pressure regulation valve that can rapidly adjust pressure from atmospheric to high vacuum range. The system dynamically controls the pressure reduction rate, allowing rapid evacuation when safe and controlled reduction when needed to prevent substrate damage

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250382705A1Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
Publication Date: 2025.12.18 KOKUSAI DENKI KK
  • US20250382705A1 patent drawing
  • US20250382705A1 patent drawing
  • US20250382705A1 patent drawing

AI summary

There is provided a technique that includes: an exhaust line including a second pressure regulation valve; a bypass line including a first pressure regulation valve; and a pressure control controller configured to control the first pressure regulation valve and the second pressure regulation valve, and configured to: adjust an opening degree of the first pressure regulation valve to reduce a pressure in a process chamber from an atmospheric pressure to a second predetermined pressure; adjust the opening degree of the first pressure regulation valve to maintain the second predetermined pressure; adjust the opening degree of the first pressure regulation valve to reduce the pressure to a first predetermined pressure; detect the pressure; adjust an opening degree of the second pressure regulation valve to reduce the pressure to a third predetermined pressure; and adjust the opening degree of the second pressure regulation valve to maintain a processing pressure.