Dual Vertical Channel Semiconductor Arrangement
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Solution Overview
Problem
Conventional semiconductor arrangements with a single channel region face limitations in current flow and performance due to restricted current paths between the source and drain regions, leading to suboptimal device performance.
Innovation Solution
The semiconductor arrangement incorporates a dual channel configuration with a first and second channel region formed in a vertical direction over source and drain regions, respectively, with a gate region between them, enhancing current paths and performance through increased channel width and multiple current paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single channel region is used in conventional semiconductor arrangements, then the device structure is simple, but the current flow and device performance are limited
Solution Approach 1:
The channel region is segmented into multiple independent channel regions (first channel region, second channel region, etc.) arranged in parallel between the source and drain regions. Each channel region can independently conduct current, thereby increasing the total current flow capacity and device performance while maintaining a relatively simple overall structure.
Solution Approach 2:
The patent transitions from a single-plane channel configuration to a multi-dimensional arrangement by stacking channel regions vertically or laterally. This dimensional expansion allows multiple current paths to coexist without significantly increasing the footprint area, thus improving performance while controlling complexity.
2Productivity
If multiple channel regions are implemented to increase current paths, then device performance improves, but the device structure becomes more complex
Solution Approach 1:
Multiple channel regions are merged into a unified semiconductor arrangement sharing common source and drain regions. This combining approach allows multiple current paths to function simultaneously while reducing the number of discrete components and interconnections needed, thereby improving current flow without proportionally increasing structural complexity.
Solution Approach 2:
The shared source and drain regions serve multiple functions by connecting to all channel regions simultaneously. This multi-functional design allows a single source region and single drain region to support multiple independent current paths, improving performance while minimizing the increase in device complexity.
Data Source
AI summary
Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a first channel region and a second channel region that are formed according to at least one of a vertical channel configuration or a dual channel configuration. The first channel region operates as a first channel between a source region and a drain region of the semiconductor arrangement. The second channel region operates as a second channel between the source region and the drain region. A gate region, formed between the first channel region and the second channel region, operates to control the first channel and the second channel. Performance of the semiconductor arrangement is improved, such as an increase in current, because two current paths between the source region and the drain region are provided by the two channels.