Dual-Waveguide Phase Modulator for Dense Photonic Integration
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Solution Overview
Problem
Existing interferometer devices require extensive electrical contact structures for phase modulation, leading to increased chip size and reduced density of Mach-Zehnder Interferometers (MZIs) in optical computing devices.
Innovation Solution
The development of a compact dual-waveguide optical phase modulator structure with semiconductor-insulator-semiconductor capacitors (SISCAP) that uses a dielectric material to separate optical waves, allowing for phase shifting and reducing the need for extensive electrical contacts, enabling closer waveguide spacing and integration within a smaller photonic integrated circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If traditional optical phase modulators with separate electrodes are used for each waveguide, then phase modulation can be achieved, but the chip size increases and device density decreases
Solution Approach 1:
The patent combines two separate optical phase modulators into a single integrated structure where a first capacitor structure modulates a first optical wave in a first waveguide and a second capacitor structure modulates a second optical wave in a second waveguide, with shared substrate and integrated electrode arrangements, thereby reducing overall chip size while maintaining phase modulation capability for both waveguides
Solution Approach 2:
The patent utilizes vertical layering with a substrate, first waveguide layer, and second waveguide layer arranged at different depths, allowing phase modulators to be stacked in the vertical dimension rather than requiring extensive lateral spacing, thus reducing chip area while preserving modulation functionality
2Area of stationary object
If waveguides are placed closer together to increase density, then device density improves, but residual coupling and crosstalk between waveguides increases
Solution Approach 1:
The patent introduces a dielectric material positioned between the first waveguide and second waveguide that acts as an intermediary to reduce residual coupling and crosstalk, allowing the waveguides to be placed closer together for increased density while maintaining signal isolation
Solution Approach 2:
The patent applies different material properties locally - the dielectric material is specifically positioned in the region between waveguides where coupling occurs, providing targeted suppression of crosstalk without affecting the optical confinement and guidance properties within each waveguide core
3Ease of operation
If extensive electrical contact structures are used for phase modulation, then modulation control is achieved, but device complexity and fabrication difficulty increase
Solution Approach 1:
The patent merges the electrical contact structures by forming first and second capacitor structures that can share common substrate regions and electrode arrangements, reducing the number of separate contact structures needed while maintaining independent control capability for each waveguide phase modulation
Solution Approach 2:
The substrate serves multiple functions simultaneously as the base for waveguide formation, the foundation for capacitor structures, and the medium for electrode placement, thereby reducing overall device complexity while enabling modulation control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for a more compact and densely packed arrangement of MZIs, reducing chip size and increasing the density of interferometer devices, while minimizing residual coupling and crosstalk between waveguides.
Implementation Method 1
The segment of the dielectric material separates two portions of its respective doped region across the lateral axis to separate the first optical wave from the second optical wave
Implementation Method 2
a first layer, above the substrate, including a first semiconductor material including a first doped region that exhibits a first conductivity type, and a second layer, above the substrate and separated from the first layer, including a second semiconductor material including a second doped region that exhibits a second conductivity type opposite from the first conductivity type
Data Source
AI summary
An apparatus includes a dual-waveguide optical phase modulator including a first waveguide and a second waveguide, in which each of the first and second waveguides includes a first waveguide core structure and a second waveguide core structure. At least one of the first waveguide core structure or the second waveguide core structure includes a ridge.


