Dual-Wavelength Photocathode for High-Brightness Electron Sources

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Solution Overview

Problem

Current photocathode designs for semiconductor manufacturing face challenges in optimizing quantum efficiency and emittance, limiting source brightness, and require improved designs and methods to overcome the tradeoff between these parameters, especially with the use of single wavelength schemes that are not tailored to the energy bands of the photocathode material.

Innovation Solution

A photocathode structure incorporating a wide bandgap semiconductor material, an alkali halide emitter, and a metal layer, with a dual wavelength excitation scheme in transmission and reflection modes, optimizing the alignment of intraband states with the valence band to enhance electron escape and reduce heat dissipation, while using a cap layer for protection and self-cleaning properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If single wavelength illumination is used to generate electron beam, then the photocathode structure is simple, but quantum efficiency and emittance are not optimized, limiting source brightness

Engineering Contradiction:
Improvephotocathode structureVSAvoidsource brightness
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies parameter changes by using dual wavelength illumination instead of single wavelength, and by controlling the thickness parameters of different layers (GaN layer: 1-100 nm, AlGaN layer: 1-100 nm, capping layer: 1-10 nm). These parameter optimizations enable simultaneous improvement of quantum efficiency and emittance, resolving the contradiction between structural simplicity and source brightness performance.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite materials by combining multiple semiconductor layers (GaN and AlGaN with different bandgaps) and different functional layers (photocathode layer, capping layer, buffer layer). This composite structure allows each layer to contribute differently to electron generation and extraction, optimizing both quantum efficiency and emittance while maintaining structural integrity.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If alkali halide photocathode is used with single wavelength illumination, then the material is simple, but the quantum efficiency is not optimized due to mismatch with energy bands

Engineering Contradiction:
Improvematerial structureVSAvoidquantum efficiency
Core Design Contradiction:
Device complexityVSUse of energy by moving object

Solution Approach 1:

The patent changes the illumination parameter from single wavelength to dual wavelength, matching different energy bands of the photocathode material. This enables efficient electron generation across different energy thresholds, significantly improving quantum efficiency without complicating the material composition itself.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The photocathode structure is designed to respond to multiple wavelengths simultaneously, making it multi-functional in terms of light absorption. The GaN and AlGaN layers work together to absorb different wavelength ranges, enabling the single photocathode material to achieve high quantum efficiency across a broader spectrum.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If conventional photocathode design is used, then the manufacturing process is simple, but emittance is high which limits source brightness

Engineering Contradiction:
Improvemanufacturing processVSAvoidsource brightness
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent segments the photocathode into multiple functional layers with specific thickness ranges (GaN: 1-100 nm, AlGaN: 1-100 nm, capping: 1-10 nm). This segmentation allows each layer to perform its specific function optimally while maintaining a relatively simple overall manufacturing process using standard thin-film deposition techniques.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different layers are assigned different local qualities: the GaN layer for high quantum efficiency, the AlGaN layer for electron extraction, and the capping layer for protection. This local optimization of material properties at different positions enables low emittance and high source brightness without significantly complicating the manufacturing process.

Inventive Principle:
Principle #3Local quality

4Device complexity

If photocathode operates without optimized wavelength matching, then the system is simple, but heat dissipation is high reducing stability and lifetime

Engineering Contradiction:
Improvewavelength schemeVSAvoidphotocathode stability
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The patent changes the illumination parameter from single to dual wavelength, optimized to match the energy bands of the photocathode materials. This parameter optimization improves energy utilization efficiency, reducing wasted energy as heat, thereby improving photocathode stability and lifetime without significantly increasing system complexity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed solution achieves higher quantum efficiency and reduced emittance, resulting in a high brightness electron source with improved stability and longer lifetime, capable of detecting smaller defects in semiconductor devices, thus enhancing semiconductor manufacturing yield and efficiency.

Implementation Method 1

A photocathode includes a body fabricated of a wide bandgap semiconductor material... An electron beam is generated as the photocathode is illuminated with a light beam

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

Alkali halide photocathodes such as CsI and CsBr have demonstrated photoemission from intraband states when illuminated with wavelengths much longer than their bandgap energy

Methodology Applied
Scientific EffectPhotoemission: Photoelectric Effect

Data Source

PatentUS10804069B2Photocathode designs and methods of generating an electron beam using a photocathode
Publication Date: 2020.10.13 KLA CORP
  • US10804069B2 patent drawing
  • US10804069B2 patent drawing
  • US10804069B2 patent drawing

AI summary

A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme.