Dual Window Layer Optoelectronic Device for Light Extraction
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Solution Overview
Problem
Current LED technologies face challenges in enhancing light extraction efficiency, which limits their luminous performance and energy conservation potential.
Innovation Solution
The proposed optoelectronic device structure includes a substrate with a first and second window layer, where the second window layer has a different semiconductor material and greater sheet resistance, and a semiconductor system in between, along with a metal layer and transparent conductive layer, optimized to increase light extraction efficiency by creating a width difference and surface roughness for improved light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional LED structure is used, then manufacturing is simple, but light extraction efficiency is low
Solution Approach 1:
The device is divided into multiple functional layers including window layers with different sheet resistances (first window layer with lower sheet resistance, second window layer with higher sheet resistance), semiconductor layers, and contact layers. This segmentation allows each layer to perform its specific function optimally, with the window layers specifically designed to manage electrical properties and enhance light extraction efficiency while maintaining manufacturability through standardized layering processes.
2Loss of energy
If light extraction efficiency is increased through structural modifications, then luminous performance improves, but device complexity increases
Solution Approach 1:
Different regions of the device have different electrical properties through the use of window layers with distinct sheet resistances. The first window layer has lower sheet resistance for effective current spreading, while the second window layer has higher sheet resistance for optimized optical performance. This local differentiation of electrical properties enables enhanced light extraction efficiency without requiring complex overall device architecture, as each local region is optimized for its specific function.
3Loss of energy
If internal quantum efficiency is increased by improving epitaxy quality, then electron-hole combination efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent optimizes electrical properties by controlling the sheet resistance parameters of the window layers. The first window layer is designed with lower sheet resistance to facilitate current spreading, while the second window layer has higher sheet resistance for optimized optical performance. By adjusting these electrical parameters during manufacturing, the device achieves high internal quantum efficiency through improved current distribution and electron-hole combination, without requiring excessively tight tolerances on epitaxy quality itself.
Data Source
AI summary
An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.