Dual-Zone Chuck Warpage Correction via Thermal Expansion
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Solution Overview
Problem
Semiconductor substrates often warp due to extreme temperature changes during processing, making them unsuitable for further processing and rendering physical contact-based correction methods ineffective.
Innovation Solution
A system with a process chamber featuring two processing volumes, where substrates are heated to expand and then cooled using a dual zonal chuck with independent pressure control, maintaining the substrate in a thermally expanded state without physical contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If physical contact methods are used to correct warpage, then correction force can be applied, but the method is not viable when IC chips are exposed on substrates
Solution Approach 1:
The patent replaces physical contact-based mechanical correction methods with a contactless approach using controlled thermal expansion and contraction. The substrate is heated to expand and flatten warpage, then cooled while constrained by a chuck to maintain the corrected flat state, eliminating the need for direct physical contact with exposed IC chips.
Solution Approach 2:
The patent changes the thermal parameters of the substrate by heating it to a temperature where thermal expansion occurs, causing the warped substrate to flatten. After flattening, the temperature is reduced while the substrate is constrained by the chuck, allowing the substrate to maintain its corrected flat state without requiring physical contact during the correction process.
2Manufacturing precision
If uniform chucking force is applied across the entire substrate, then simple control is achieved, but differential warpage correction is insufficient
Solution Approach 1:
The patent divides the chuck into multiple independent zones (inner zone and outer zone) that can be controlled separately. Each zone has its own pressure control system, allowing differential chucking forces to be applied to different regions of the substrate. This enables precise correction of complex warpage patterns that cannot be addressed by uniform pressure alone.
Solution Approach 2:
The patent implements local quality control by providing different chucking forces at different locations on the substrate. The inner zone and outer zone of the chuck apply different pressures tailored to the specific warpage characteristics in each region, enabling precise localized correction while maintaining overall substrate flatness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for quick, inexpensive, and contactless warpage correction of substrates, ensuring they remain in an unwarped state, suitable for downstream processes.
Implementation Method 1
heating the substrate to a first temperature while supported on a carrier disposed within a first processing volume of a process chamber using a first heating device disposed within the first processing volume
Implementation Method 2
maintaining the substrate at or near the first temperature using a second heating device disposed within the second processing volume
Implementation Method 3
cooling the substrate on the chuck while providing a chucking force at an outer zone of the chuck that is different than a chucking force provided at an inner zone of the chuck
Data Source
AI summary
Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.