Dual-Zone Semiconductor Substrate Cooling Apparatus
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Solution Overview
Problem
Conventional semiconductor manufacturing techniques often result in wafer cracking during cooling due to rapid temperature differences between the central and peripheral portions of the semiconductor substrate.
Innovation Solution
A semiconductor manufacturing apparatus with a first cooler for the central portion and a second cooler for the peripheral portion, where the second cooler maintains a higher temperature than the first cooler, reducing the temperature difference and preventing cracking by controlling the cooling rates through thermally conductive materials and refrigerant management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the wafer is cooled rapidly on a cooling plate, then the cooling efficiency is improved, but the wafer is cracked due to temperature difference between central and peripheral portions
Solution Approach 1:
The cooling plate is divided into multiple independent cooling zones (first cooling zone, second cooling zone, third cooling zone) with different cooling capacities. The first cooling zone corresponds to the central portion, the second to the intermediate portion, and the third to the peripheral portion. This segmentation allows each zone to cool at different rates, preventing thermal stress cracks while maintaining overall cooling efficiency.
Solution Approach 2:
Different regions of the cooling plate are designed with different thermal conductivities and cooling capacities. The central portion has higher cooling capacity with higher thermal conductivity material, while the peripheral portion has lower cooling capacity with lower thermal conductivity material. This local differentiation of cooling properties matches the thermal characteristics of different wafer regions, preventing cracking.
2Device complexity
If uniform cooling is applied across the entire wafer surface, then the cooling process is simplified, but temperature difference between central and peripheral portions causes cracking
Solution Approach 1:
The cooling plate is divided into multiple independent cooling zones with different cooling capacities. The first cooling zone (central) has higher cooling capacity, the second cooling zone (intermediate) has medium cooling capacity, and the third cooling zone (peripheral) has lower cooling capacity. This segmentation enables differentiated cooling control without requiring complex external control systems.
Solution Approach 2:
The thermal conductivity parameter of the cooling plate is varied across different regions. The first cooling zone uses material with higher thermal conductivity, while the second and third cooling zones use material with lower thermal conductivity. This parameter change creates inherent differential cooling capability that prevents thermal stress cracks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively suppresses cracking by uniformly cooling the semiconductor substrate, maintaining the structural integrity of the substrate during the cooling process after high-temperature film-forming processes.
Implementation Method 1
a first cooler (4) which includes a first placing portion (41) capable of placing a central portion (21) of the semiconductor substrate thereon, and cools the central portion by heat exchange with the first placing portion
Implementation Method 2
a second cooler (5) which includes a second placing portion (51) capable of placing a peripheral portion (22) of the semiconductor substrate thereon in a periphery of the first placing portion, and cools the peripheral portion by heat exchange with the second placing portion
Data Source
AI summary
A semiconductor manufacturing apparatus according to the present embodiment includes a first cooler, a second cooler, and a temperature controller. The first cooler includes a first placing portion that can place a central portion of a semiconductor substrate thereon, and cools the central portion by heat exchange with the first placing portion. The second cooler includes a second placing portion that can place a peripheral portion of the semiconductor substrate thereon in a periphery of the first placing portion, and cools the peripheral portion. The temperature controller controls a temperature of the second placing portion to be lower than a temperature of the semiconductor substrate and to be higher than a temperature of the first placing portion.