Dummy Boundary Cells for IC Macro IP Protection
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Solution Overview
Problem
In integrated circuit (IC) design, existing methods for inserting dummy boundary cells to minimize device degradation during semiconductor wafer manufacturing are inefficient, leading to potential defects and violations of design rules, especially in the placement and routing of macros and channels.
Innovation Solution
A method is introduced that uses different types of dummy boundary cells corresponding to specific gate lengths to protect macros, with these cells being strategically placed around and between macros to ensure proper alignment and minimize empty space, thereby preventing design rule violations and enhancing IP protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dummy boundary cells are inserted to protect macros and minimize device degradation, then manufacturing reliability is improved, but device complexity increases
Solution Approach 1:
The patent segments dummy boundary cells into different types based on gate length characteristics. First type dummy boundary cells have a first gate length matching transistors in the main pattern, while second type dummy boundary cells have a second gate length different from the first. This segmentation allows selective placement of appropriate dummy cell types in different regions, providing targeted protection while managing complexity through systematic classification.
Solution Approach 2:
The patent applies local quality by using different types of dummy boundary cells in different locations. First type dummy boundary cells are used where gate length matching is needed, while second type dummy boundary cells are used in other regions. This localized approach ensures that each region receives the appropriate type of protection, optimizing manufacturing reliability without uniformly increasing complexity across the entire device.
2Manufacturing precision
If different types of dummy boundary cells with different gate lengths are used, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent segments dummy boundary cells into different types based on gate length characteristics. First type dummy boundary cells have a first gate length matching transistors in the main pattern, while second type dummy boundary cells have a second gate length different from the first. This segmentation allows selective placement of appropriate dummy cell types in different regions, providing targeted protection while managing complexity through systematic classification.
Solution Approach 2:
The patent changes the gate length parameter of dummy boundary cells to match or differ from the main pattern transistors, depending on the required protection level and location. By adjusting this critical parameter, the patent optimizes manufacturing precision for different regions while maintaining a manageable set of cell types.
3Reliability
If dummy boundary cells are placed around and between macros, then IP protection is improved, but area occupied increases
Solution Approach 1:
The patent applies partial action by selectively placing first and second type dummy boundary cells in specific regions around and between macros, rather than uniformly placing dummy cells everywhere. This targeted approach provides necessary IP protection in critical areas while minimizing the total area occupied by dummy cells.
Data Source
AI summary
Methods for inserting dummy boundary cells in an integrated circuit (IC) are provided. A plurality of macros and a top channel are merged into floorplan of the IC. The top channel is arranged between the macros and is filled with a plurality of first dummy boundary cells, and each of the macros includes a macro boundary and a main pattern surrounded by the macro boundary. The first dummy boundary cells within the top channel and between a first macro and a second macro are replaced with a plurality of second dummy boundary cells. The macro boundaries of the first and second macros are formed by the second dummy boundary cells. First gate length of dummy patterns within the first dummy boundary cells is greater than second gate length of dummy patterns within the second dummy boundary cells. The first and second dummy boundary cells are the same size.