Dummy Source/Drain Contact Layout for Semiconductor Scaling
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in the micro-patterning process, leading to difficulties in improving device performance due to increased complexity and precision requirements.
Innovation Solution
A semiconductor device design that includes a substrate with active regions, gate lines, and source/drain contact patterns, where a dummy source/drain contact pattern of smaller size is introduced between the gate lines to reduce resistance and enhance performance by limiting damage to the active region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the size of source/drain contact patterns is reduced to accommodate miniaturization, then device density increases, but manufacturing precision requirements become more difficult to meet
Solution Approach 1:
The patent applies different size specifications to different contact patterns: actual source/drain contact patterns use a first size for optimal electrical connection, while dummy contact patterns use a second size (smaller than the first) specifically to prevent damage to the active region during micro-patterning processes. This local differentiation resolves the contradiction by allowing smaller features (dummy contacts) where precision is difficult to achieve, while maintaining larger features (actual contacts) where precision can be controlled.
2Ease of manufacture
If dummy source/drain contact patterns are introduced to optimize micro-patterning, then manufacturing difficulty is reduced, but device structure complexity increases
Solution Approach 1:
Dummy source/drain contact patterns serve as intermediary elements that facilitate the micro-patterning process. These dummy contacts act as sacrificial features that help define and protect the active region boundaries during manufacturing, making the patterning process easier to control. The dummy contacts are subsequently removed or rendered non-functional, having served their purpose as manufacturing aids without permanently increasing device complexity.
3Reliability
If larger source/drain contact patterns are used, then electrical connection quality improves, but damage to the active region during fabrication increases
Solution Approach 1:
The patent segments the contact pattern function into two distinct types: actual source/drain contact patterns that provide electrical connections with optimal size for low resistance, and dummy contact patterns that are smaller and positioned to prevent damage to the active region during fabrication. This segmentation allows each type to be optimized for its specific function without compromising the other.
Data Source
AI summary
A semiconductor device includes a substrate including an active region, a first gate line and a second gate line in the active region, a first source/drain contact pattern in the active region at one side of the first gate line, a second source/drain contact pattern in the active region at one side of the second gate line, and a dummy source/drain contact pattern in the active region between the first gate line and the second gate line. The first gate line and the second gate line may be spaced apart from each other in the first direction and may extend in the second direction. The second direction may cross the first direction. A size of the dummy source/drain contact pattern may be less than a size of the first source/drain contact pattern and a size of the second source/drain contact pattern.