Dummy Device Gate Structures for Leakage Current Reduction
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Solution Overview
Problem
The increasing complexity in semiconductor manufacturing due to scaling down of IC dimensions leads to significant leakage current in polysilicon-on-active-edge structures, particularly in finFETs, which can render automotive ICs defective and affect the reliability of commercial products.
Innovation Solution
The introduction of a transistor structure with one or more active devices and at least one dummy device disposed at the edge, where the dummy device has a different gate structure than the active devices, along with specific design rules and processing schemes, such as varying gate widths and layer compositions, to reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If continuous active region is formed by abutting active regions in neighboring cells, then cell size is reduced, but leakage current increases significantly
Solution Approach 1:
The patent extracts the problematic continuous active region configuration by introducing dummy devices that interrupt the continuity. The dummy devices are placed at cell edges to break up the abutment of active regions between neighboring cells, thereby eliminating the leakage current path while maintaining compact cell layout
Solution Approach 2:
The patent introduces dummy devices as intermediary elements between active regions in neighboring cells. These dummy devices act as mediators that prevent direct contact between active regions, thereby blocking leakage current paths while allowing the cells to maintain reduced dimensions
2Object-generated harmful factors
If dummy devices with different gate structure are introduced, then leakage current is reduced, but device complexity increases
Solution Approach 1:
The patent applies local quality by giving dummy devices different gate structures specifically at cell edges where leakage occurs, while active devices maintain their standard gate structure. This localized differentiation targets the leakage problem without requiring complex gate structures throughout the entire device array
Data Source
AI summary
Certain aspects of the present disclosure generally relate to techniques for reducing leakage current in polysilicon-on-active-edge structures. An example transistor structure includes one or more active devices and at least one dummy device disposed at an edge of the transistor structure, wherein the at least one dummy device has a different gate structure than the one or more active devices.