Semiconductor Device Dummy Elements for Uniform Gate Intervals

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Solution Overview

Problem

The arrangement of semiconductor elements operating at different power voltages in a semiconductor device results in extra space between elements, leading to deviations in the interval between gate structures and active regions, which affects the electrical characteristics and yield of the device.

Innovation Solution

Incorporating dummy elements with smaller active regions and gate structures between adjacent semiconductor elements to maintain uniform intervals and prevent expansion of active regions, thereby improving electrical characteristics and yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If semiconductor elements are arranged on a substrate, then the device can be manufactured, but extra space is generated between elements causing deviations in intervals

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidinterval uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

A dummy element is introduced as an intermediary component between adjacent semiconductor elements. This dummy element occupies the extra space generated during arrangement and has gate structures that define uniform intervals with the adjacent elements, thereby mediating the space issue without affecting the functional elements.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The dummy element is designed with specific dimensional parameters - its active region length in the second direction is made less than the active region length of functional elements. This parameter adjustment allows the dummy element to fill space appropriately while maintaining the desired interval uniformity across the substrate.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If dummy elements are added to maintain uniform intervals, then manufacturing precision improves, but device complexity increases

Engineering Contradiction:
Improveinterval uniformityVSAvoidelement quantity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The dummy element is designed as a non-functional placeholder that does not contribute to the device's operational complexity. It serves only to maintain geometric uniformity and is treated as a sacrificial or filler component that can be easily fabricated and removed if necessary, minimizing its impact on overall device complexity.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Manufacturing precision

If dummy elements with smaller active regions are used, then interval consistency is improved, but the dummy element occupies less space

Engineering Contradiction:
Improveinterval consistencyVSAvoiddummy element area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The dummy element exhibits local quality differences - its active region has a different length in the second direction compared to functional elements. This localized dimensional variation is specifically tailored to match the spacing requirements at different locations in the device, allowing optimal interval maintenance without requiring the dummy element to occupy excessive space.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12453097B2Semiconductor device and memory device including a dummy element
Publication Date: 2025.10.21 SAMSUNG ELECTRONICS CO LTD
  • US12453097B2 patent drawing
  • US12453097B2 patent drawing
  • US12453097B2 patent drawing

AI summary

A semiconductor device includes a plurality of semiconductor elements, each of the plurality of semiconductor elements including an active region disposed on a substrate, and a gate structure intersecting the active region and extending in a first direction that is parallel to an upper surface of the substrate; and at least one dummy element disposed between a pair of semiconductor elements adjacent to each other in a second direction, intersecting the first direction, among the plurality of semiconductor elements. The dummy element includes a dummy active region and at least one dummy gate structure intersecting the dummy active region and extending in the first direction. A length of the dummy active region in the second direction is less than a length of the active region included in each of the pair of semiconductor elements.