Dummy Gate Patterns with Bridge Structures for Semiconductor Stability
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Solution Overview
Problem
Dummy patterns in semiconductor devices often exhibit undercuts or asymmetrical shapes, leading to instability and defects in subsequent processes, which affects pattern density and patternability.
Innovation Solution
A semiconductor device design featuring stable dummy gate structures with specific configurations, including connected dummy gate lines, bridge patterns, and protrusions, which are formed using a method involving multiple mask layers and spacer formation to ensure precise alignment and shape consistency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If dummy patterns are formed to increase pattern density, then pattern density is improved, but undercuts and asymmetrical shapes occur leading to instability
Solution Approach 1:
The dummy gate pattern is divided into multiple dummy gate lines (first, second, third dummy gate lines) that are connected through bridge patterns. This segmentation allows each line to be independently controlled and positioned, preventing undercut formation while maintaining overall pattern density. The bridge patterns connect these segmented lines to form a complete dummy gate structure.
Solution Approach 2:
Bridge patterns serve as intermediary structures that connect the dummy gate lines. These bridge patterns are formed at specific positions between the dummy gate lines to provide structural support and ensure proper alignment, preventing the dummy patterns from forming asymmetrical shapes or undercuts while maintaining density.
2Ease of manufacture
If dummy patterns are formed to increase patternability, then patternability is improved, but asymmetrical shapes occur leading to defects
Solution Approach 1:
The dummy gate lines are intentionally designed with asymmetrical positioning relative to the active gate lines, with specific dummy gate lines disposed at different distances from reference lines. This controlled asymmetry improves patternability by allowing flexible layout design while the bridge patterns ensure proper connection and prevent defects.
Solution Approach 2:
The bridge patterns are formed in advance during the gate formation process to connect the dummy gate lines before subsequent processing steps. This preliminary connection ensures that the dummy patterns maintain their intended asymmetrical configuration without developing defects during later manufacturing steps.
3Manufacturing precision
If multiple mask layers and spacer formation are used to form stable dummy patterns, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The dummy gate lines and bridge patterns are formed using a nested structure where the bridge patterns are positioned between and connect the dummy gate lines. This nested arrangement allows all components to be formed in a single patterning step using multiple mask layers, achieving high alignment precision without requiring separate processing steps for each component.
Solution Approach 2:
The formation of dummy gate lines and bridge patterns is merged into a single patterning process using multiple mask layers. This combining of operations achieves precise alignment between dummy gate lines and active gate lines while avoiding the need for separate formation steps, thereby reducing overall process complexity despite the use of multiple masks.
Data Source
AI summary
A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.