Dummy Gate Patterning Lines Crossbar Stability
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Solution Overview
Problem
In highly scaled advanced semiconductor processes, dummy gate lines with high aspect ratio tend to wiggle or collapse due to capillary forces at tight gate pitch, leading to issues such as metal gate fill, spacer etch, dummy gate cut, and other downstream problems.
Innovation Solution
The implementation of self-aligned double patterning (SADP) with small cuts in a backbone material to create a crossbar or 'ladder rung' structure between dummy gate lines, enhancing structural stability and allowing direct EUV printing of crossbars between dummy gate lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If dummy gate lines are formed with high aspect ratio at tight gate pitch, then device density is increased, but structural stability deteriorates due to capillary forces causing wiggling or collapse
Solution Approach 1:
The dummy gate lines are segmented by forming crossbar structures that divide the continuous lines into smaller sections. This segmentation reduces the aspect ratio of individual line segments while maintaining the overall density, thereby improving structural stability against capillary forces during processing
Solution Approach 2:
The dummy gate structure is formed as a composite of intersecting gate lines and crossbar structures. This composite architecture creates a grid-like pattern that enhances mechanical stability through mutual support, preventing wiggling and collapse while maintaining high device density
2Stability of the object's composition
If self-aligned double patterning with crossbar structures is implemented, then structural stability of dummy gate lines is improved, but manufacturing complexity increases
Solution Approach 1:
The crossbar structures are formed preliminarily during the self-aligned double patterning process before final dummy gate line formation. This preliminary action ensures that the supporting crossbars are already in place to prevent structural collapse during subsequent processing steps
Solution Approach 2:
The self-aligned double patterning process utilizes the existing dummy gate line patterns to automatically define the positions of crossbar structures. The process is self-aligning, where the crossbars form precisely where needed based on the dummy gate line geometry, reducing the need for additional alignment steps and complex manufacturing procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves defect and yield rates by increasing the structural stability of dummy gate patterning lines, maintaining across-wafer density uniformity and enabling consistent processing.
Implementation Method 1
dummy gate lines with high aspect ratio tend to wiggle or collapse due to capillary forces at tight gate pitch
Data Source
AI summary
Dummy gate patterning lines, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a first gate line along a first direction. A second gate line is parallel with the first gate line along the first direction. A third gate line extends between and is continuous with the first gate line and the second gate line along a second direction, the second direction orthogonal to the first direction.