Self-Aligned Gate Cut Layout Before Dummy Gate Patterning
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Solution Overview
Problem
The alignment of gate cut structures in semiconductor devices is challenging due to limitations in lithography technology, leading to alignment errors that result in low yield and potential shorting between adjacent semiconductor devices.
Innovation Solution
The formation of self-aligned gate cut structures using spacer structures and a sacrificial material with etch selectivity, allowing for precise placement and isolation between semiconductor devices, eliminating the need for traditional lithography-based alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional lithography-based alignment methods are used to position gate cut structures, then the manufacturing process is simpler, but alignment precision deteriorates leading to errors and shorting
Solution Approach 1:
The gate cut structure positions itself automatically through the self-aligned formation process. The spacer structures are formed conformally on the semiconductor regions, and the gate cut is created by removing material between the spacers, ensuring automatic centering without requiring external alignment operations.
Solution Approach 2:
Spacer structures serve as intermediary elements that define the position of the gate cut structure. The spacers are formed on the semiconductor regions and act as templates, with the gate cut being positioned precisely between them through selective material removal, eliminating the need for direct lithographic alignment.
2Reliability
If lithography technology is used to align gate cut structures, then the manufacturing process is more straightforward, but alignment errors increase leading to low yield
Solution Approach 1:
The gate cut structure positions itself automatically through the self-aligned formation process. The spacer structures are formed conformally on the semiconductor regions, and the gate cut is created by removing material between the spacers, ensuring automatic centering without requiring external alignment operations.
Solution Approach 2:
The spacer structures are formed in advance on the semiconductor regions before the gate cut is created. This preliminary formation of spacers establishes the precise position for the gate cut, ensuring correct alignment is achieved before the actual gate structure fabrication begins.
3Reliability
If gate cut structures are formed with precise alignment, then shorting between devices is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
Spacer structures serve as intermediary elements that define the position of the gate cut structure. The spacers are formed on the semiconductor regions and act as templates, with the gate cut being positioned precisely between them through selective material removal, eliminating the need for direct lithographic alignment.
Solution Approach 2:
The gate cut structure positions itself automatically through the self-aligned formation process. The spacer structures are formed conformally on the semiconductor regions, and the gate cut is created by removing material between the spacers, ensuring automatic centering without requiring external alignment operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures consistent and precise placement of gate cut structures, reducing the likelihood of shorting and improving the robustness of semiconductor devices by maintaining equal distances between gate cut structures and semiconductor regions, thereby enhancing device performance and yield.
Implementation Method 1
removing the sacrificial material from between the spacer structures and replacing the removed sacrificial material with a gate cut structure
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 3A~3B
AI summary
Techniques are provided herein to form semiconductor devices having self-aligned gate cut structures. In an example, neighboring semiconductor devices (102b, 102c) each include a semiconductor region (110) extending between a source region and a drain region, and a gate structure (112) extending over the semiconductor regions of the neighboring semiconductor devices. A gate cut structure (114) that includes a dielectric material interrupts the gate structure between the neighboring semiconductor devices. Due to the process of forming the gate cut structure, the distance between the gate cut structure and the semiconductor region of one of the neighboring semiconductor devices is substantially the same as (e.g., within 1.5 nm of) the distance between the gate cut structure and the semiconductor region of the other one of the neighboring semiconductor devices and the gate cut structure extends beyond the width of the gate structure to also interrupt gate spacers on the sidewalls of the gate structure.