Dummy Gate Line Routing for Semiconductor Device Congestion
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Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor devices lead to routing congestion between back-end-of-line (BEOL) wires due to a relatively low decrease in critical poly-pitch, exacerbating manufacturing challenges.
Innovation Solution
The implementation of a dummy gate line in a field region as a routing channel, which overlaps with active regions and extends in a specific direction, allowing signal transmission between transistors without the need for additional wiring, thereby addressing routing congestion and simplifying the BEOL connection process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If standard cell height and critical poly-pitch are decreased to increase integration, then device density is improved, but routing congestion between BEOL wires is exacerbated
Solution Approach 1:
The patent utilizes the field region, traditionally a non-functional spacer area, as a new routing dimension. By forming dummy gate lines in the field region that can carry signals, the invention creates an additional routing plane above and below the active transistor regions, effectively adding vertical routing dimensions to relieve horizontal congestion in the BEOL layers.
Solution Approach 2:
The dummy gate lines, which are structurally similar to functional gate lines but positioned in the field region, are designed to serve dual purposes: maintaining proper spacing and alignment between adjacent active regions while simultaneously functioning as signal routing channels. This multi-functionality reduces the need for separate dedicated routing structures.
2Ease of operation
If additional wiring is added to address routing congestion, then signal transmission capability is improved, but manufacturing process complexity increases
Solution Approach 1:
The invention merges the formation of dummy gate lines with the existing gate line fabrication process. The same deposition and etching steps used to create functional gate lines are also used to create dummy gate lines in the field region, eliminating the need for separate manufacturing processes and reducing BEOL complexity.
Solution Approach 2:
The dummy gate lines are formed using self-aligned processes where the field region definition and dummy gate line formation are automatically aligned through the same photolithography and etching steps. This self-alignment mechanism eliminates the need for additional alignment steps and reduces manufacturing complexity.
Data Source
AI summary
A semiconductor device includes: first through fourth active regions spaced apart from one another; a first gate line disposed to overlap with the first and second active regions, but not with the third and fourth active regions, and to extend in a first direction; a second gate line disposed to overlap with the third and fourth active regions, but not with the first and second active regions, and to extend in the first direction while being spaced apart from the first gate line; and a dummy gate line disposed to overlap with the first through fourth active regions and a field region, to be spaced apart from the first and second gate lines in a second direction, and to extend in the first direction, wherein a signal input to the first or second active region is transmitted to the third or fourth active region.