Dummy Gate Width Adjustment for Semiconductor Yield
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Solution Overview
Problem
The scaling down of semiconductor integrated circuits increases complexity and manufacturing challenges, particularly due to issues with dummy gates peeling off and damaging the gate electrodes during photolithography processes, which affects the yield of semiconductor devices.
Innovation Solution
Incorporating dummy gate electrodes with widths greater than the gate electrodes to reduce the likelihood of peeling, thereby improving the yield and stability of semiconductor devices during fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If dummy gates are used to homogenize optical proximity effect, then image resolution is improved, but the dummy gates may peel off and damage the gate electrode
Solution Approach 1:
The patent changes the physical parameters of the dummy gate by forming it with a greater width than the gate electrode. This parameter change increases the dummy gate's structural stability and adhesion area, preventing peeling while maintaining its function in homogenizing optical proximity effects during photolithography
Solution Approach 2:
The dummy gate is formed in advance during the gate electrode formation process, before subsequent processing steps. By establishing the dummy gate with proper dimensions early in the fabrication sequence, the structure is pre-configured to resist peeling forces that may occur during later manufacturing steps
2Productivity
If geometry size is scaled down to increase functional density, then production efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating a dummy gate with different dimensions (greater width) than the functional gate electrode. This localized structural modification addresses the specific problem of peeling in the dummy gate region without affecting the overall scaling benefits, allowing continued miniaturization while managing local manufacturing challenges
Data Source
AI summary
A semiconductor and a method for manufacturing the semiconductor device are provided. A semiconductor substrate is provided. A first oxide layer is formed over an active region. A first STI is formed to adjoin a first side of the active region, and a second STI is formed to adjoin a second side of the active region. A gate layer is formed over the first STI, the second STI and the first oxide layer. A masking element is formed over the gate layer. The gate layer is etched using the masking element to form a first gate electrode over the first oxide layer, a first dummy gate electrode over the first STI, and a second dummy gate electrode over the second STI. A width of the first gate electrode is smaller than a width of the first dummy gate electrode and a width of the second dummy gate electrode.