Dummy Pattern Placement for Semiconductor Layout Deformation
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Solution Overview
Problem
Existing methods for placing dummy patterns in semiconductor devices struggle to arrange them closely to main patterns, leading to pattern deformation due to excessive gaps, especially in high-density designs, as uniform rectangular dummy patterns are ineffective in preventing deformation.
Innovation Solution
A method involving the placement of vertical and horizontal dummy patterns with specific size ratios, where these are initially arranged close to main patterns and then adjusted to conform to minimum design rules, ensuring they are not too close to prevent deformation, by removing rule-violation dummies to allow dense and stable arrangement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If uniform rectangular dummy patterns are used, then the placement process is simple, but the dummy patterns cannot be placed close to main patterns, causing excessive gaps and pattern deformation
Solution Approach 1:
The dummy pattern placement process is segmented into multiple sequential steps: first placing vertical dummy patterns, then removing those violating design rules,接着 placing horizontal dummy patterns, and finally removing those violating rules. This segmentation allows dense placement while maintaining design rule compliance, resolving the contradiction between placement simplicity and pattern accuracy.
Solution Approach 2:
Vertical dummy patterns are placed first as a preliminary action before horizontal dummy patterns are added. This preliminary placement creates a foundation for subsequent horizontal placement, enabling denser overall dummy pattern density while maintaining the ability to control final pattern accuracy through selective removal of rule-violating patterns.
2Manufacturing precision
If dummy patterns are placed close to main patterns, then pattern deformation is prevented, but design rules may be violated
Solution Approach 1:
The placement process is divided into distinct phases: initial dense placement of vertical dummies, removal of rule-violating vertical dummies, placement of horizontal dummies, and removal of rule-violating horizontal dummies. Each phase targets specific placement needs while maintaining design rule compliance, achieving close placement without excessive overall complexity.
Solution Approach 2:
Different dummy patterns (vertical vs. horizontal) are placed in different locations and orientations based on local design rule requirements. Vertical dummies are placed in regions where vertical spacing allows, horizontal dummies where horizontal spacing allows, creating locally optimized placements that achieve density while complying with local design rules.
3Ease of manufacture
If uniform size dummy patterns are used, then manufacturing is simple, but the dummy patterns are ineffective when main patterns are microscopic or dense
Solution Approach 1:
While maintaining uniform dummy pattern sizes for manufacturing simplicity, the invention achieves effectiveness in dense/main pattern configurations by using two different orientations (vertical and horizontal) and placing them in complementary patterns. This local variation in orientation and placement strategy enhances effectiveness for microscopic and dense main patterns without complicating the manufacturing process.
Data Source
AI summary
Disclosed is a method for placing dummy patterns in a semiconductor device layout. More specifically, the method places the dummy patterns densely between main patterns in accordance with a sequence and configuration. The method includes placing vertical dummies having a greater length than width in a region other than main patterns to form a first layout, removing the vertical dummies within a first distance from the main patterns to form a second layout, placing horizontal dummies having a greater length than width in a vacant space of the second layout to form a third layout, and removing the horizontal dummies within a second distance from the main patterns in the third layout. The method prevents and/or inhibits pattern deformation.