Dummy Pattern Relieves Stress in Semiconductor Array Fins
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The reduction in minimum feature size in semiconductor devices leads to internal stress, causing misalignment and damage to elements, which affects the integration density and reliability of semiconductor structures.
Innovation Solution
A semiconductor structure is designed with a dummy pattern in an elongated configuration surrounding fins on a substrate, accompanied by an insulating layer and capping layer, to relieve internal stress within the array area, thereby minimizing distortion and improving performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but internal stress increases causing misalignment and damage to elements
Solution Approach 1:
A dummy pattern is introduced as an intermediary structure between the array area and peripheral region. This dummy pattern acts as a stress-absorbing mediator that prevents stress from the reduced feature size from propagating to the active device elements, thereby maintaining element integrity while allowing high integration density
Solution Approach 2:
The dummy pattern converts the harmful internal stress generated by reduced feature size into a beneficial stress distribution. By intentionally placing non-functional pattern structures, the stress is absorbed and redistributed in a controlled manner, protecting the functional elements from misalignment and damage
2Productivity
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but misalignment occurs due to internal stress
Solution Approach 1:
The dummy pattern serves as a buffer zone that mediates between the high-density array area and the peripheral region. This intermediary structure absorbs dimensional variations and stress-induced distortions, ensuring that alignment accuracy is maintained even when feature sizes are reduced for higher integration density
3Productivity
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but damage to elements occurs due to internal stress
Solution Approach 1:
The dummy pattern transforms the harmful concentration of internal stress into a beneficial distributed stress field. By providing additional non-functional pattern structures, the stress that would otherwise concentrate and damage elements is redistributed across the dummy pattern area, effectively protecting element strength while maintaining high integration density
Solution Approach 2:
The dummy pattern provides beforehand cushioning by being positioned in advance to absorb and distribute internal stresses before they can propagate to and damage the functional device elements. This preventive structure ensures element strength is maintained despite the stress-inducing reduction in feature size
Data Source
AI summary
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate defined with a peripheral region and an array area at least partially surrounded by the peripheral region; disposing an insulating layer over the substrate; disposing a capping layer over the insulating layer; disposing a hardmask stack on the capping layer; patterning the hardmask stack; removing portions of the capping layer exposed through the hardmask stack; removing portions of the insulating layer exposed through the hardmask stack; removing portions of the substrate exposed through the capping layer and the insulating layer to form a plurality of fins in the array area and a first elongated member at least partially surrounding the plurality of fins; removing the hardmask stack; and forming an isolation over the substrate and surrounding the plurality of fins and the first elongated member.