Dummy Recess Filling Pattern for Residue-Free Gate Trench Masking
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Solution Overview
Problem
Existing semiconductor manufacturing methods face challenges in efficiently forming recess filling patterns, leading to incomplete removal of mask layers and potential process failures due to residual mask layer remnants.
Innovation Solution
A method involving etching a substrate to form cell and dummy trenches, followed by forming preliminary isolation structures and mask layers with recess filling patterns that completely fill the recesses, allowing for precise gate structure formation without residual mask layer issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional mask layer formation methods are used, then the manufacturing process is simpler, but residual mask layer remnants remain causing process failures
Solution Approach 1:
The patent applies preliminary action by forming recesses in the mask layer before completing the mask layer formation. This allows the recess filling pattern to be prepared in advance, ensuring complete filling and preventing residual mask layer remnants that would cause process failures, thereby improving process reliability without significantly complicating the overall manufacturing process.
2Reliability
If recess filling patterns are not completely formed, then the manufacturing process is faster, but residual mask layer causes process failures
Solution Approach 1:
The patent forms recesses in the mask layer during the mask layer formation process itself, before the mask layer is complete. This preliminary action ensures that when the recess filling pattern is subsequently formed, the recesses are already prepared and can be completely filled, preventing residual mask layer issues while maintaining manufacturing efficiency.
3Reliability
If multiple mask layers are formed with recesses, then residual mask layer remnants are prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The patent segments the mask layer formation process into multiple stages: forming a first mask layer with first recesses, forming a second mask layer with second recesses, and forming a third mask layer with third recesses. Each layer is formed with recesses that extend through the respective layer, ensuring complete filling and preventing residual mask layer remnants. This segmentation approach systematically addresses reliability issues while maintaining clear process structure.
Data Source
AI summary
A manufacturing method of a semiconductor device includes: etching a substrate, thereby forming a cell trench and a dummy trench; forming a preliminary isolation structure on the substrate, wherein a first dummy recess is formed in the preliminary isolation structure and overlaps with the dummy trench; forming a lower mask layer on the preliminary isolation structure, wherein a second dummy recess is formed in the lower mask layer and overlaps with the first dummy recess; forming a dummy recess filling pattern filling the second dummy recess; forming an upper mask layer on the lower mask layer and the dummy recess filling pattern; forming a gate trench using the lower mask layer and the upper mask layer as a mask; and forming a gate structure in the gate trench.